ISP75NXT Infineon Technologies, ISP75NXT Datasheet

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ISP75NXT

Manufacturer Part Number
ISP75NXT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of ISP75NXT

Lead Free Status / Rohs Status
Compliant
Smart Lowside Power Switch
Data Sheet Rev. 1.4
Features
• Logic Level Input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Green Product (RoHS compliant)
• AEC Stress Test Qualification
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded
protection functions.
Type
HITFET
Product Summary
Parameter
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
Data Sheet Rev. 1.4
Powernet
BSP 75N
Ordering Code
on request
1
Symbol
V
R
I
I
E
D(lim)
D(Nom)
DS
DS(ON)
AS
Package
PG-SOT223-4
Value
60
550
1
0.7
550
HITFET
BSP 75N
2008-07-10
Unit
V
mΩ
A
A
mJ

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ISP75NXT Summary of contents

Page 1

... Green Product (RoHS compliant) • AEC Stress Test Qualification Application • All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and applications and for 42 Volt Powernet • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology ...

Page 2

HITFET Logic dV/dt IN limitation Over temperature Protection ESD Figure 1 Block Diagram Figure 2 Pin Configuration Pin Definitions and Functions Pin No. Symbol Function 1 IN Input; activates output and supplies internal logic 2 DRAIN Output to the load ...

Page 3

... Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions • ...

Page 4

Absolute Maximum Ratings = 25 °C, unless otherwise specified T j Parameter Continuous drain source voltage Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V ≤ ≤ 10V ...

Page 5

Electrical Characteristics = 25 °C, unless otherwise specified T j Parameter Static Characteristics Drain source clamp voltage Off state drain current Input threshold voltage Input current normal operation, < D D(lim) I current limitation mode After ...

Page 6

Electrical Characteristics (cont’ °C, unless otherwise specified T j Parameter Slew rate 50% Slew rate off 50 to 70% 2) Protection Functions Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive T energy j ...

Page 7

EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Temperature Supply Voltage Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Max. 1) ...

Page 8

PULSE V BB BSP75N IN DRAIN SOURCE Figure 3 Test circuit for ISO pulse Conducted Emissions Acc. IEC 61967-4 (1Ω/150Ω method) Typ. V Emissions at PWM-mode with bb 150Ω-matching network 100 ...

Page 9

Block diagram HITFET DRAIN SOURCE V IN Figure 5 Terms IN SOURCE Figure 6 Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. LOAD Drain V AZ Power Source DMOS Figure 7 Inductive ...

Page 10

... Timing diagrams 0.9 Figure 9 Switching a Resistive Load DS(AZ Figure 10 Switching an Inducitve Load Data Sheet Rev. 1 D(lim ϑ j 0.1 Figure 11 t off  HITFET BSP 75N t t thermal hysteresis t Short circuit 2008-07-10 ...

Page 11

Max. allowable power dissipation tot Amb 1 1,2 0,8 0 On-state resistance 0.7 ...

Page 12

Typ. on-state resistance = 25 ° 0 Ω Typ. ...

Page 13

Package Outlines HITFET 6.5 ±0 ±0.1 1 0.7 ±0.1 4.6 0. Figure 12 PG-SOT223-4 ( Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government ...

Page 14

Revision History Version Date Changes Rev. 1.4 2008-07-10 fixed a formatting error in Disclaimer page Rev. 1.3 2008-04-14 package naming updated to PG-SOT223-4 Rev. 1.2 2007-04-12 released automotive green version changed package naming from -11 to PG-SOT223-4-7 Rev. 1.1 ...

Page 15

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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