IRG4RC10KDTR International Rectifier, IRG4RC10KDTR Datasheet
IRG4RC10KDTR
Specifications of IRG4RC10KDTR
Related parts for IRG4RC10KDTR
IRG4RC10KDTR Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V • Generation 4 IGBT design provides tighter parameter ...
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IRG4RC10KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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rate d 0.8 volta 0.0 0.1 Fig Typical Load Current vs. ...
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IRG4RC10KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 ...
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1MHz ies res oes ce gc 300 C ies 200 100 C oes ...
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IRG4RC10KD 2 Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector Current (A) C Fig Typical ...
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5° ° /dt - (A/µ s) ...
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IRG4RC10KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit Package Outline TO-252AA Outline Dimensions are shown in ...
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IRG4RC10KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...