IRG4RC10KDTR International Rectifier, IRG4RC10KDTR Datasheet

IRG4RC10KDTR

Manufacturer Part Number
IRG4RC10KDTR
Description
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC10KDTR

Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-252AA package
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
• Latest generation 4 IGBT's offer highest power density
• HEXFRED
• For hints see design tip 97003
* When mounted on 1" square PCB (FR-4 or G-10 Material).
V
I
I
I
I
I
I
t
V
P
P
T
T
R
R
R
Wt
Circuit Rated to 10µs @ 125°C, V
parameter distribution and higher efficiency than
For recommended footprint and soldering techniques refer to application note #AN-994
high operating frequencies >5.0 kHz , and Short
previous generation
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Minimized recovery characteristics reduce noise, EMI and
C
C
CM
LM
F
FM
sc
STG
motor controls possible
switching losses
CES
GE
D
D
J
@ T
@ T
@ T
JC
JC
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diodes optimized for performance with IGBTs.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Parameter
Parameter
GE
TM
= 15V
ultrafast,
G
n-ch an nel
300 (0.063 in. (1.6mm) from case)
0.3 (0.01)
Typ.
–––
–––
–––
IRG4RC10KD
C
E
-55 to +150
TO-252AA
Max.
± 20
D-PAK
600
9.0
5.0
4.0
18
18
16
10
38
15
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
Max.
V
GE
–––
3.3
7.0
50
CES
= 15V, I
= 600V
PD 91736A
= 2.39V
C
12/30/00
= 5.0A
Units
°C/W
Units
g (oz)
µs
°C
V
A
V
W
1

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IRG4RC10KDTR Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V • Generation 4 IGBT design provides tighter parameter ...

Page 2

IRG4RC10KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...

Page 3

rate d 0.8 volta 0.0 0.1 Fig Typical Load Current vs. ...

Page 4

IRG4RC10KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02  SINGLE PULSE 0.01 ...

Page 5

1MHz ies res oes ce gc 300  C ies 200 100  C oes ...

Page 6

IRG4RC10KD  2 Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector Current (A) C Fig Typical ...

Page 7

5° ° /dt - (A/µ s) ...

Page 8

IRG4RC10KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit Package Outline TO-252AA Outline Dimensions are shown in ...

Page 10

IRG4RC10KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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