GT60M303 Toshiba, GT60M303 Datasheet

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GT60M303

Manufacturer Part Number
GT60M303
Description
Manufacturer
Toshiba
Datasheet

Specifications of GT60M303

Channel Type
N
Configuration
Single
Collector-emitter Voltage
900V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±25V
Package Type
TO-3P(LH)
Pin Count
3
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GT60M303
Manufacturer:
TOSHIBA
Quantity:
600
Part Number:
GT60M303
Manufacturer:
FUJI
Quantity:
9 000
Part Number:
GT60M303
Manufacturer:
TOSHIBA
Quantity:
400
HIGH POWER SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
EQUIVALENT CIRCUIT
Fourth generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed I
Low saturation voltage
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Emitter−Collector
Foward Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Screw Torque
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
CHARACTERISTIC
FRD : t
GBT
: t
f
rr
= 0.25μs (TYP.)
= 0.7μs (TYP.)
DC
1ms
DC
1ms
: V
CE (sat)
SYMBOL
I
GT60M303
V
V
= 2.1V (TYP.)
I
ECFP
T
I
ECF
P
GES
CES
I
CP
T
stg
C
C
j
(Ta = 25°C)
−55~150
RATING
900
±25
120
120
170
150
0.8
60
15
1
MARKING
UNIT
N·m
°C
°C
W
GT60M303
V
V
A
A
TOSHIBA
JAPAN
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
GT60M303
2-21F2C
2006-11-01
Unit: mm

Related parts for GT60M303

GT60M303 Summary of contents

Page 1

... ECFP P 170 150 ° −55~150 °C stg ― 0.8 N·m MARKING TOSHIBA GT60M303 JAPAN 1 GT60M303 Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-01 ...

Page 2

... off 15A ECF 15A −20A / μs R IGBT th (j−c) R Diode th (j−c) 2 GT60M303 MIN TYP. MAX UNIT ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 1.6 2.2 V ― 2.1 2.7 V ― 3800 ― pF ― 0.35 0.60 ― 0.46 0.75 μ ...

Page 3

... GT60M303 2006-11-01 ...

Page 4

... GT60M303 2006-11-01 ...

Page 5

... GT60M303 2006-11-01 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT60M303 20070701-EN 2006-11-01 ...

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