GT60M303 Toshiba, GT60M303 Datasheet
GT60M303
Specifications of GT60M303
Available stocks
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GT60M303 Summary of contents
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... ECFP P 170 150 ° −55~150 °C stg ― 0.8 N·m MARKING TOSHIBA GT60M303 JAPAN 1 GT60M303 Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-01 ...
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... off 15A ECF 15A −20A / μs R IGBT th (j−c) R Diode th (j−c) 2 GT60M303 MIN TYP. MAX UNIT ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 1.6 2.2 V ― 2.1 2.7 V ― 3800 ― pF ― 0.35 0.60 ― 0.46 0.75 μ ...
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... GT60M303 2006-11-01 ...
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... GT60M303 2006-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT60M303 20070701-EN 2006-11-01 ...