APTGF50X60T3G MICROSEMI, APTGF50X60T3G Datasheet
APTGF50X60T3G
Specifications of APTGF50X60T3G
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APTGF50X60T3G Summary of contents
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... T = 25° 80° 25° 25° 125°C j www.microsemi.com APTGF50X60T3G V = 600V CES I = 50A 80°C C • Motor control • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50X60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...
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... R : Thermistor value − B heatsink 17 12 www.microsemi.com APTGF50X60T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.5 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...
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... T =-55° 25°C J 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A 100 125 www.microsemi.com APTGF50X60T3G Output Characteristics (V =10V) GE 150 250µs Pulse Test < 0.5% Duty cycle T =-55°C J 100 T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge ...
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... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50X60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 60 ...
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... U.S and Foreign patents pending. All Rights Reserved. Cies Coes Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50X60T3G Operating Frequency vs Collector Current 240 V = 400V CE 200 2.7Ω G 160 T = 125° ...