FMG2G75US60NL Fairchild Semiconductor, FMG2G75US60NL Datasheet
FMG2G75US60NL
Specifications of FMG2G75US60NL
Related parts for FMG2G75US60NL
FMG2G75US60NL Summary of contents
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... Maximum Power Dissipation D T Operating Junction Temperature J T Storage Temperature Range stg V Isolation Voltage iso Power Terminals Screw : M5 Mounting Torque Mounting Screw : M5 Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation = 15V 75A unless otherwise noted C Description @ 100 ...
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... Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts T Short Circuit Withstand Time sc Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc ©2001 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA -- ...
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... Diode Reverse Recovery Charge rr Thermal Characteristics Symbol R Junction-to-Case (IGBT Part, per 1/2 Module Junction-to-Case (DIODE Part, per 1/2 Module Case-to-Sink CS Weight Weight of Module ©2001 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions I = 75A 75A 150 A/us Parameter (Conductive grease applied) Min. ...
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... Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ 75A Ic = 40A Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2001 Fairchild Semiconductor Corporation 200 Common Emitter V 12V T 160 T 120 Vge = 10V 0.3 [V] CE Fig 2. Typical Saturation Voltage Characteristics 100 ...
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... Gate Resistance, R Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter V = 300V +/- 15V 3 125 C C 100 Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation 1000 Common Emitter Common Emitter 1MHz 25℃ 100 [V] CE Fig 8. Turn-On Characteristics vs. 10000 Toff Tf 1000 Fig 10 ...
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... Single Nonrepetitive ≤ 125℃ Pulse 15V 3.3 G 0.1 0 100 200 300 400 Collector-Emitter Voltage, V Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation 15 Common Emitter Eoff 9 Eon 100 120 140 [A] C Fig 14. Gate Charge Characteristics 50us 100 100us 1㎳ ...
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... Common Cathode 25℃ C 160 T = 125℃ C 120 Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 150A/㎲ 25℃ 100℃ Forward Current, I [A] F FMG2G75US60 Rev. A ...
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... Package Dimension ©2001 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G75US60 Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...