FMG2G75US60NL Fairchild Semiconductor, FMG2G75US60NL Datasheet

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FMG2G75US60NL

Manufacturer Part Number
FMG2G75US60NL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMG2G75US60NL

Channel Type
N
Configuration
Dual
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / Rohs Status
Compliant
©2001 Fairchild Semiconductor Corporation
FMG2G75US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ T
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
I
I
I
I
T
P
T
T
V
Mounting
Torque
C
CM (1)
F
FM
stg
SC
J
CES
GES
D
iso
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Curent
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
CE(sat)
C
= 100 C, V
= 2.2 V @ I
Description
GE
T
= 15V
C
C
= 75A
= 25 C unless otherwise noted
@ T
@ T
@ T
@ AC 1minute
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C1
Package Code : 7PM-GA
Internal Circuit Diagram
FMG2G75US60
G1
-40 to +150
-40 to +125
E1
2500
600
150
150
310
2.0
2.0
75
75
10
20
E1/C2
G2
September 2001
E2
IGBT
E2
FMG2G75US60 Rev. A
Units
N.m
N.m
us
W
V
V
A
A
A
A
V
C
C

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FMG2G75US60NL Summary of contents

Page 1

... Maximum Power Dissipation D T Operating Junction Temperature J T Storage Temperature Range stg V Isolation Voltage iso Power Terminals Screw : M5 Mounting Torque Mounting Screw : M5 Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation = 15V 75A unless otherwise noted C Description @ 100 ...

Page 2

... Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts T Short Circuit Withstand Time sc Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc ©2001 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA -- ...

Page 3

... Diode Reverse Recovery Charge rr Thermal Characteristics Symbol R Junction-to-Case (IGBT Part, per 1/2 Module Junction-to-Case (DIODE Part, per 1/2 Module Case-to-Sink CS Weight Weight of Module ©2001 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions I = 75A 75A 150 A/us Parameter (Conductive grease applied) Min. ...

Page 4

... Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ 75A Ic = 40A Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2001 Fairchild Semiconductor Corporation 200 Common Emitter V 12V T 160 T 120 Vge = 10V 0.3 [V] CE Fig 2. Typical Saturation Voltage Characteristics 100 ...

Page 5

... Gate Resistance, R Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter V = 300V +/- 15V 3 125 C C 100 Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation 1000 Common Emitter Common Emitter 1MHz 25℃ 100 [V] CE Fig 8. Turn-On Characteristics vs. 10000 Toff Tf 1000 Fig 10 ...

Page 6

... Single Nonrepetitive ≤ 125℃ Pulse 15V 3.3 G 0.1 0 100 200 300 400 Collector-Emitter Voltage, V Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation 15 Common Emitter Eoff 9 Eon 100 120 140 [A] C Fig 14. Gate Charge Characteristics 50us 100 100us 1㎳ ...

Page 7

... Common Cathode 25℃ C 160 T = 125℃ C 120 Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 150A/㎲ 25℃ 100℃ Forward Current, I [A] F FMG2G75US60 Rev. A ...

Page 8

... Package Dimension ©2001 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G75US60 Rev. A ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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