SST5460 Vishay, SST5460 Datasheet
SST5460
Specifications of SST5460
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SST5460 Summary of contents
Page 1
... D High Input Impedance D Very Low Noise D High Gain Low Capacitance: 1.2 pF Typical The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. TO-226AA (TO-92 Top View Gate-Drain Voltage ...
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... Series Vishay Siliconix _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS Gate Operating Current I G Drain Cutoff Current I D(off) Gate-Source Voltage V GS Gate-Source V GS(F) Forward Voltage Dynamic Common-Source g fs ...
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... 0.2 V –8 0.4 V –6 0.6 V –4 0.8 V –2 1 –16 –20 0 –2 0.6 V –1.6 0.8 V –1.2 –0.8 1.0 V –0.4 1 –0.8 –1 2N/SST5460 Series Vishay Siliconix On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage –100 mA – kHz – Gate-Source Cutoff Voltage (V) GS(off) Output Characteristics ...
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... Series Vishay Siliconix Transfer Characteristics – 1.5 V GS(off) –4 – –55_C A –2 25_C –1 125_C 0 0 0.4 0.8 V – Gate-Source Voltage (V) GS On-Resistance vs. Drain Current 1000 T = 25_C A 800 V = 1.5 V GS(off) 600 3 V 400 200 0 –0.1 –1 I – Drain Current (mA) D Transconductance vs ...
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... Frequency (Hz) Document Number: 70262 S-04030—Rev. D, 04-Jun- 0.1 –1 2 100 k 2N/SST5460 Series Vishay Siliconix Common-Source Forward Transconductance vs. Drain Current GS(off –55_C A 1 25_C 125_C V = – kHz –0.1 –1 I – Drain Current (mA) D Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...