K4T1G164QE-HCF8000 Samsung Semiconductor, K4T1G164QE-HCF8000 Datasheet - Page 24

• Manufacturer Part Number: K4T1G164QE-HCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

15.0 Specific Notes for dedicated AC parameters
K4T1G084QE
K4T1G164QE
1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
2. AL = Additive Latency.
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5. Timings are specified with command/address input slew rate of 1.0 V/ns.
6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
8. Data setup and hold time derating.
Table 1 - DDR2-400/533 tDS/tDH derating with differential data strobe
Table 2 - DDR2-667/800 tDS/tDH derating with differential data strobe
K4T1G044QE
Siew
Slew
V/ns
V/ns
rate
rate
DQ
DQ
tXARDS is expected to be used for slow active power down exit timing.
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
125
100
83
67
0
4.0 V/ns
0
4.0 V/ns
-
-
-
-
-
-
-
-
-
-
-
-
∆tDS, ∆tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)
∆tDS, ∆tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
45
21
45
21
0
0
-
-
-
-
-
-
-
-
-
-
-
-
125
100
-11
67
83
-5
0
0
3.0 V/ns
3.0 V/ns
-
-
-
-
-
-
-
-
-
-
-14
-14
45
21
45
21
0
0
-
-
-
-
-
-
-
-
-
-
100
125
-25
-13
-11
83
67
-5
0
0
2.0 V/ns
2.0 V/ns
-
-
-
-
-
-
-
-
-14
-31
-14
-31
45
21
45
21
0
0
-
-
-
-
-
-
-
-
-10
-13
-31
79
12
95
12
-1
7
1
1.8 V/ns
-
-
-
-
1.8 V/ns
-
-
-
-
DQS,DQS Differential Slew Rate
DQS,DQS Differential Slew Rate
24 of 45
-19
-42
-19
-42
33
12
33
12
-2
-2
-
-
-
-
-
-
-
-
-10
-19
-43
24
19
11
24
13
-1
1.6 V/ns
2
1.6 V/ns
-
-
-
-
-
-
-
-
-30
-59
-30
-59
24
10
24
10
-7
-7
-
-
-
-
-
-
-
-
-24
-31
-74
31
25
23
14
11
-7
2
-
-
-
-
-
-
-
-
1.4V/ns
1.4V/ns
-18
-47
-89
-18
-47
-89
22
22
5
5
-
-
-
-
-
-
-
-
-127
-12
-52
-19
-62
35
26
14
23
5
-
-
-
-
-
-
-
-
1.2V/ns
1.2V/ns
Rev. 1.1 December 2008
-140
-140
-35
-77
-35
-77
17
17
-6
-6
-
-
-
-
-
-
-
-
DDR2 SDRAM
-115
-40
-50
38
26
17
-7
0
-
-
-
-
-
-
-
-
-
-
1.0V/ns
1.0V/ns
-128
-128
-23
-65
-23
-65
6
6
-
-
-
-
-
-
-
-
-
-
-103
-28
-38
38
12
5
-
-
-
-
-
-
0.8V/ns
-
-
-
-
-
-
0.8V/ns
-116
-116
-11
-53
-53
-11
-
-
-
-
-
-
-
-
-
-
-
-