K4T1G164QE-HCF8000 Samsung Semiconductor, K4T1G164QE-HCF8000 Datasheet - Page 30

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K4T1G164QE-HCF8000

Manufacturer Part Number
K4T1G164QE-HCF8000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet

Specifications of K4T1G164QE-HCF8000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
V
V
Hold Slew Rate
IL
IL
REF
DDQ
IH
IH
Rising Signal
Figure 9 - IIIustration of nominal slew rate for tDH (differential DQS, DQS)
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
DQS
DQS
V
SS
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
∆TR
slew rate
tDS
nominal
IL
(DC)max
30 of 45
tDH
∆TR
Hold Slew Rate
Falling Signal
nominal
slew rate
tDS
=
V
IH
(DC)min - V
tDH
∆TF
∆TF
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM

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