K4T1G164QE-HCF8000 Samsung Semiconductor, K4T1G164QE-HCF8000 Datasheet - Page 33

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K4T1G164QE-HCF8000

Manufacturer Part Number
K4T1G164QE-HCF8000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet

Specifications of K4T1G164QE-HCF8000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
V
V
V
V
Hold Slew Rate
V
V
Note : DQS signal must be monotonic between V
Rising Signal
IL
IL
REF
DDQ
IH
IH
(DC)max
(AC)max
(AC)min
(DC)min
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
=
dc to V
dc to V
region
region
tangent line [ V
REF
REF
∆TR
tDS
REF
tangent
line
(DC) - V
33 of 45
tDH
IL
Hold Slew Rate
Falling Signal
(DC)max ]
∆TR
IL
(DC)max and V
nominal
line
=
tangent line [ V
tDS
IH
tangent
(DC)min.
line
tDH
∆TF
IH
∆TF
(DC)min - V
nominal
line
Rev. 1.1 December 2008
DDR2 SDRAM
REF
(DC) ]

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