K4T1G164QE-HCF8000 Samsung Semiconductor, K4T1G164QE-HCF8000 Datasheet - Page 42

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K4T1G164QE-HCF8000

Manufacturer Part Number
K4T1G164QE-HCF8000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet

Specifications of K4T1G164QE-HCF8000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
24. tWTR is at lease two clocks (2 x tCK or 2 x nCK) independent of operation frequency.
25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the V
26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the V
27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire
28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
29. These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respec-
30. These parameters are measured from a data strobe signal ((L/U/R)DQS/DQS) crossing to its respective clock signal (CK/CK) crossing. The spec val-
31. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/
32. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}, which is in clock
33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode register set.
34. New units, ’tCK(avg)’ and ’nCK’, are introduced in DDR2-667 and DDR2-800. Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under
35. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec parameters' and these
Clock period jitter
Clock period jitter during DLL locking period
Cycle to cycle clock period jitter
Cycle to cycle clock period jitter during DLL locking period
Cumulative error across 2 cycles
Cumulative error across 3 cycles
Cumulative error across 4 cycles
Cumulative error across 5 cycles
Cumulative error across n cycles, n = 6 ... 10, inclusive
Cumulative error across n cycles, n = 11 ... 50, inclusive
Duty cycle jitter
single-ended data strobe crossing V
the single-ended data strobe crossing V
be monotonic between V
single-ended data strobe crossing V
single-ended data strobe crossing V
monotonic between V
time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period
of tIS + 2 x tCK + tIH.
tive clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup
and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is
present or not.
ues are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these
parameters should be met whether clock jitter is present or not.
R)DQS/DQS) crossing.
cycles, assuming all input clock jitter specifications are satisfied.
For DDR2-667 5-5-5, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 5, i.e. as long as the input clock jitter specifications
are met, Precharge command at Tm and Active command at Tm+5 is valid even if (Tm+5 - Tm) is less than 15ns due to input clock jitter.
operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.
tCK(avg) + tERR(2per),min.
parameters apply to DDR2-667 and DDR2-800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means:
Note that in DDR2-400 and DDR2-533, ’tCK’ is used for both concepts.
ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm+2, even if (Tm+2 - Tm) is 2 x
Parameter
IL
(DC)max and V
IL
(DC)max and V
IH/L
IH/L
IH/L
IH
(AC) at the end of its transition for a rising signal, and from the input signal crossing at the V
(DC) at the start of its transition for a rising signal, and from the input signal crossing at the V
(AC) at the end of its transition for a falling signal applied to the device under test. The DQS signal must be
IH/L
(DC)min.
IH
(DC) at the start of its transition for a falling signal applied to the device under test. The DQS signal must
(DC)min.
tERR(11-50per)
tERR(6-10per)
tJIT(per,lck)
tERR(2per)
tERR(3per)
tERR(4per)
tERR(5per)
tJIT(cc,lck)
tJIT(duty)
tJIT(per)
Symbol
tJIT(cc)
42 of 45
-125
-100
-250
-200
-175
-225
-250
-250
-350
-450
-125
Min
DDR2-667
Max
175
225
250
250
125
100
250
200
350
450
125
-100
-200
-160
-150
-175
-200
-200
-300
-450
-100
Min
-80
DDR2-800
Rev. 1.1 December 2008
Max
100
200
160
150
175
200
200
300
450
100
80
DDR2 SDRAM
units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
IH
IH
IL
(DC) level to the
(AC) level to the
(DC) level to the
IL
(AC) level to
Notes
35
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