K4T1G164QE-HCF8000 Samsung Semiconductor, K4T1G164QE-HCF8000 Datasheet - Page 7

• Manufacturer Part Number: K4T1G164QE-HCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4T1G084QE
K4T1G164QE
K4T1G044QE
Note : V
V
DDL
DDQ
G
M
A
B
C
D
E
F
H
K
L
N
P
R
J
and V
, V
SS
3.3 x16 package pinout (Top View) : 84ball FBGA Package
Top view
(See the balls through package)
Ball Locations (x16)
DQ14
DQ12
, and V
V
V
V
SSDL
DQ6
DQ4
BA2
V
V
V
V
DDQ
DDQ
DDL
1
DD
DD
SS
DD
Populated ball
Ball not populated
are power and ground for the DLL. It is recommended that they be isolated on the device from V
SSQ
.
A10/AP
V
V
V
V
V
CKE
DQ9
DQ1
BA0
A12
NC
NC
A3
A7
SSQ
SSQ
SSQ
SSQ
REF
2
DQ11
V
V
UDM
LDM
DQ3
BA1
V
V
V
WE
NC
A1
A5
A9
DDQ
DDQ
3
SS
SS
SS
7 of 45
4
5
M
A
B
C
D
E
F
G
H
K
N
P
R
J
L
6
1
UDQS
LDQS
V
DQ10
V
V
V
V
DQ2
RAS
CAS
A11
SSDL
NC
2
A2
A6
SSQ
DDQ
SSQ
DDQ
7
3
4
UDQS
LDQS
V
V
V
V
DQ8
DQ0
5
CK
CK
NC
CS
A0
A4
A8
SSQ
SSQ
SSQ
SSQ
8
6
7
8
DQ15
DQ13
V
V
V
V
ODT
DQ7
DQ5
V
V
V
DDQ
DDQ
DDQ
DDQ
Rev. 1.1 December 2008
9
DD
DD
SS
9
DDR2 SDRAM
DD
,