HYB39S256800DTL-7 Infineon Technologies, HYB39S256800DTL-7 Datasheet - Page 22
HYB39S256800DTL-7
Manufacturer Part Number
HYB39S256800DTL-7
Description
Manufacturer
Infineon Technologies
Datasheet
1.HYB39S256800DTL-7.pdf
(28 pages)
Specifications of HYB39S256800DTL-7
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Table 14
Symbol
1)
2) These parameters depend on the cycle rate. All values are measured at 166 MHz for -6, at 133 MHz for
3) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is
4)
Data Sheet
I
I
I
I
I
I
I
I
DD1
DD2P
DD2N
DD3N
DD3P
DD4
DD5
DD6
T
-7 and -7.5 and at 100 MHz for -8 components with the outputs open. Input signals are changed once during
assumed and the
t
RFC
A
= 0 to 70 °C;
=
t
CS =
RFC(min)
t
CS =
CS =
CS =
t
t
x4, x8, x16
RC
RFC
RFC
I
=
DD
=
= 7.8 µs
V
V
V
t
V
t
RC(min)
RFC(min)
Specifications and Conditions
IH (min.)
IH (min.)
IH(min)
“burst refresh”,
IH(min)
V
V
SS
DDQ
, CKE ≤
,
, CKE ≥
= 0 V;
, CKE ≤
, CKE≥
I
O
current is excluded.
= 0 mA
standard
components
low power
components
V
DD
V
V
V
V
t
IL(max.)
IH(min.)
,
IL(max)
IH(min)
RFC
V
DDQ
= 7.8 µs “distributed refresh”.
= 3.3 V ± 0.3 V
-6
100
2
35
40
5
110
220
3
3
1.5
0.85
1)
-7
80
2
30
35
5
90
190
3
3
1.5
0.85
22
max.
-7.5
80
2
30
35
5
90
190
3
3
1.5
0.85
-8
80
2
25
30
5
70
160
3
3
1.5
0.85
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Electrical Characteristics
Note/ Test Condition
2)3)
2)
2)
2)
2)
2)3)
4)
10072003-13LE-FGQQ
Rev. 1.02, 2004-02
t
CK
.