HYB39S256800DTL-7 Infineon Technologies, HYB39S256800DTL-7 Datasheet - Page 22

• Manufacturer Part Number: HYB39S256800DTL-7
• Manufacturer: Infineon Technologies

Specifications of HYB39S256800DTL-7

• Lead Free Status / Rohs Status: Not Compliant

Table 14
Symbol
1)
2) These parameters depend on the cycle rate. All values are measured at 166 MHz for -6, at 133 MHz for
3) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is
4)
Data Sheet
I
I
I
I
I
I
I
I
DD1
DD2P
DD2N
DD3N
DD3P
DD4
DD5
DD6
T
-7 and -7.5 and at 100 MHz for -8 components with the outputs open. Input signals are changed once during
assumed and the
t
RFC
A
= 0 to 70 °C;
=
t
CS =
RFC(min)
t
CS =
CS =
CS =
t
t
x4, x8, x16
RC
RFC
RFC
I
=
DD
=
= 7.8 µs
V
V
V
t
V
t
RC(min)
RFC(min)
Specifications and Conditions
IH (min.)
IH (min.)
IH(min)
“burst refresh”,
IH(min)
V
V
SS
DDQ
, CKE ≤
,
, CKE ≥
= 0 V;
, CKE ≤
, CKE≥
I
O
current is excluded.
= 0 mA
standard
components
low power
components
V
DD
V
V
V
V
t
IL(max.)
IH(min.)
,
IL(max)
IH(min)
RFC
V
DDQ
= 7.8 µs “distributed refresh”.
= 3.3 V ± 0.3 V
-6
100
2
35
40
5
110
220
3
3
1.5
0.85
1)
-7
80
2
30
35
5
90
190
3
3
1.5
0.85
22
max.
-7.5
80
2
30
35
5
90
190
3
3
1.5
0.85
-8
80
2
25
30
5
70
160
3
3
1.5
0.85
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Electrical Characteristics
Note/ Test Condition
2)3)
2)
2)
2)
2)
2)3)
4)
10072003-13LE-FGQQ
Rev. 1.02, 2004-02
t
CK
.