K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 14

• Manufacturer Part Number: K4T1G164QF-BCE6
• Manufacturer: Samsung Semiconductor

Specifications of K4T1G164QF-BCE6

• Lead Free Status / Rohs Status: Compliant

K4T1G044QF
K4T1G084QF
K4T1G164QF
7.6 Differential input AC logic Level
NOTE :
1. V
2. The typical value of V
3. For information related to V
7.7 Differential AC output parameters
NOTE :
1. The typical value of V
8. ODT DC electrical characteristics
NOTE : Test condition for Rtt measurements
Measurement Definition for V
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to V
voltage at which differential output signals must cross.
tude allowed for overshoot and undershoot.
plementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
at which differential input signals must cross.
ID
V
Symbol
Symbol
V
V
(AC) specifies the input differential voltage |V
OX
ID
IX
Measurement Definition for Rtt(eff): Apply V
(AC)(DC), and V
(AC)
(AC)
(AC)
AC differential cross point voltage
IX
OX
DDQ
(AC) is expected to be about 0.5 * V
(AC) is expected to be about 0.5 * V
Rtt(eff) =
delta VM =
values defined in SSTL_18
PEAK
AC differential cross point voltage
PARAMETER/CONDITION
M
AC differential input voltage
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
: Measure voltage (V
DDQ
V
V
I(
CP
TR
/2
V
Parameter
Parameter
V
IH
IH
2 x VM
(AC)
V
(AC)
DDQ
TR
IH
) - I(
-V
(AC) and V
-
CP
V
IL
V
M
| required for switching, where V
IL
- 1
(AC)
) at test pin (midpoint) with no load.
DDQ
DDQ
(AC)
IL
of the transmitting device and V
Figure 2. Differential signal levels
datasheet
of the transmitting device and V
(AC) to test pin separately, then measure current I(V
x 100%
)
V
V
DDQ
SSQ
V
ID
- 14 -
0.5 * V
0.5 * V
TR
is the true input signal (such as CK, DQS, LDQS or UDQS) and V
DDQ
DDQ
Min.
Min.
0.5
IH
IX
SYMBOL
OX
delta VM
(AC) - V
(AC) is expected to track variations in V
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
- 0.175
- 0.125
(AC) is expected to track variations in V
IL
V
(AC).
IX or
Crossing point
V
MIN
120
60
40
- 6
OX
0.5 * V
0.5 * V
IH
(AC)) and I( V
V
DDQ
DDQ
Max.
Max.
NOM
DDQ
150
75
50
+ 0.175
+ 0.125
IL
DDQ
(AC)) respectively. V
MAX
DDR2 SDRAM
180
DDQ
+ 6
90
60
. V
.
IX
(AC) indicates the voltage
V
UNITS
Units
Units
OX
ohm
ohm
ohm
V
V
V
%
(AC) indicates the
IH
CP
Rev. 1.11
(AC), V
is the com-
NOTE
NOTE
NOTE
1
1
1
1
1
2
1
IL