K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 15

• Manufacturer Part Number: K4T1G164QF-BCE6
• Manufacturer: Samsung Semiconductor

Specifications of K4T1G164QF-BCE6

• Lead Free Status / Rohs Status: Compliant

K4T1G044QF
K4T1G084QF
K4T1G164QF
9. OCD default characteristics
NOTE :
1. Absolute Specifications (0°C ≤ T
2. Impedance measurement condition for output source DC current: V
between V
values of V
3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.
4. Slew rate measured from V
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.
Output impedance
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
guaranteed by design and characterization.
DDQ
OUT
and V
between 0V and 280mV.
DDQ
Description
- 280mV. Impedance measurement condition for output sink dc current: V
IL
(AC) to V
CASE
≤ +95°C; V
IH
(AC).
DD
= +1.8V ±0.1V, V
Output
(V
Parameter
OUT
Sout
datasheet
)
DDQ
DDQ
= 1.7V; V
= +1.8V ±0.1V)
V
OUT
TT
See full strength default driver characteristics
Min
1.5
- 15 -
0
0
25 ohm
= 1420mV; (V
on device operation specification
18ohm at norminal condition
DDQ
Reference
Point
OUT
= 1.7V; V
-V
Nom
DDQ
)/Ioh must be less than 23.4 ohms for
OUT
= 280mV;
Max
1.5
V
4
5
OUT
/Iol must be less than 23.4 ohms for
DDR2 SDRAM
Unit
ohm
ohm
ohm
V/ns
values of V
1,4,5,6,7,8
Rev. 1.11
NOTE
1,2,3
OUT
1,2
6