K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 20

• Manufacturer Part Number: K4T1G164QF-BCE6
• Manufacturer: Samsung Semiconductor

Specifications of K4T1G164QF-BCE6

• Lead Free Status / Rohs Status: Compliant

K4T1G044QF
K4T1G084QF
K4T1G164QF
12. Input/Output capacitance
13. Electrical Characteristics & AC Timing for DDR2-800/667
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
(0 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRP
tRC
OPER
Parameter
< 95 °C; V
Parameter
DDQ
3.75
12.5
12.5
57.5
min
2.5
45
5
-
= 1.8V + 0.1V; V
DDR2-800(E7)
5-5-5
tRFC
tREFI
70000
max
8
8
8
-
-
-
-
datasheet
DD
0 °C ≤ T
85 °C < T
= 1.8V + 0.1V)
Symbol
CASE
CASE
3.75
min
2.5
15
15
60
45
≤ 85°C
3
-
≤ 95°C
DDR2-800(F7)
- 20 -
Symbol
CDCK
CDIO
CCK
CIO
CDI
6-6-6
CI
70000
256Mb
max
8
8
8
-
-
-
-
7.8
3.9
75
Min
1.0
1.0
2.5
x
x
x
DDR2-667
512Mb
105
7.8
3.9
3.75
min
15
15
60
45
Max
0.25
0.25
2.0
2.0
3.5
0.5
5
3
-
DDR2-667(E6)
127.5
1Gb
5 - 5 - 5
7.8
3.9
Min
1.0
1.0
2.5
x
x
x
70000
DDR2-800
max
DDR2 SDRAM
2Gb
195
7.8
3.9
8
8
8
-
-
-
-
Max
0.25
1.75
0.25
2.0
3.5
0.5
327.5
4Gb
7.8
3.9
Units
Rev. 1.11
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
pF
pF
pF
pF
pF
pF
ns
µs
µs