K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 31

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K4T1G164QF-BCE6

Manufacturer Part Number
K4T1G164QF-BCE6
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K4T1G164QF-BCE6

Lead Free Status / Rohs Status
Compliant

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K4T1G044QF
K4T1G084QF
K4T1G164QF
V
V
V
V
V
V
Hold Slew Rate
REF
IL
IL
DDQ
IH
IH
Rising Signal
(DC)max
(AC)max
(AC)min
(DC)min
DQS
DQS
(DC)
Figure 11. IIIustration of nominal slew rate for tDH (differential DQS, DQS)
V
SS
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
datasheet
∆TR
slew rate
tDS
nominal
IL
(DC)max
tDH
- 31 -
∆TR
Hold Slew Rate
Falling Signal
nominal
slew rate
tDS
=
V
IH
(DC)min - V
tDH
∆TF
∆TF
REF
(DC)
DDR2 SDRAM
Rev. 1.11

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