K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 33

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K4T1G164QF-BCE6

Manufacturer Part Number
K4T1G164QF-BCE6
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K4T1G164QF-BCE6

Lead Free Status / Rohs Status
Compliant

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K4T1G044QF
K4T1G084QF
K4T1G164QF
V
V
V
V
V
V
REF
IL
IL
DDQ
IH
IH
Hold Slew Rate tangent line [ V
(DC)max
(AC)max
Rising Signal
(AC)min
(DC)min
(DC)
DQS
DQS
V
SS
Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)
=
dc to V
dc to V
region
region
REF
REF
datasheet
tDS
tangent
REF
line
∆TR
(DC) - V
Hold Slew Rate
Falling Signal
tDH
IL
- 33 -
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tDS
tangent
line
IH
tDH
(DC)min - V
∆TF
∆TF
nominal
line
REF
(DC) ]
DDR2 SDRAM
Rev. 1.11

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