K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 34

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K4T1G164QF-BCE6

Manufacturer Part Number
K4T1G164QF-BCE6
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K4T1G164QF-BCE6

Lead Free Status / Rohs Status
Compliant

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K4T1G044QF
K4T1G084QF
K4T1G164QF
DQS
Note1
V
V
V
V
Hold Slew Rate
V
V
NOTE : DQS signal must be monotonic between V
Rising Signal
IL
IL
DDQ
REF
IH
IH
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
=
Figure 14. IIIustration of tangent line for tDH (single-ended DQS)
dc to V
dc to V
region
region
tangent line [ V
REF
REF
tDS
datasheet
REF
tangent
∆TR
line
(DC) - V
tDH
IL
IL
Hold Slew Rate
(DC)max and V
Falling Signal
(DC)max ]
∆TR
- 34 -
nominal
line
IH
(DC)min.
=
tangent line [ V
tDS
tangent
line
tDH
IH
∆TF
nominal
(DC)min - V
∆TF
line
REF
(DC) ]
DDR2 SDRAM
Rev. 1.11

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