TIP102TUNL

Manufacturer Part NumberTIP102TUNL
ManufacturerFairchild Semiconductor
TIP102TUNL datasheet
 

Specifications of TIP102TUNL

PolarityNPNNumber Of Elements1
Collector-emitter Voltage100VCollector-base Voltage(max)100V
Emitter-base Voltage (max)5VCollector-emitter Saturation Voltage2@6mA@3A/2.5@80mA@8AV
Collector Current (dc) (max)8ADc Current Gain200@8A@4V/1000@3A@4V
Operating Temp Range-65C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220Lead Free Status / Rohs StatusCompliant
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TIP100/TIP101/TIP102
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
=1000 @ V
FE
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP105/106/107
1.Base
Absolute Maximum Ratings*
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage : TIP100
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current (DC)
B
P
Collector Dissipation (T
C
Collector Dissipation (T
T
Junction Temperature
J
T
Storage Temperature
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2007 Fairchild Semiconductor Corporation
TIP100/TIP101/TIP102 Rev. 1.0.0
=4V, I
=3A (Min.)
CE
C
Equivalent Circuit
B
TO-220
1
2.Collector
3.Emitter
@
R1
@
R2
T
= 25°C unless otherwise noted
a
Parameter
: TIP100
: TIP101
: TIP102
: TIP101
: TIP102
=25°C)
a
=25°C)
C
1
October 2008
C
R1
R2
10k W
E
0.6kW
Ratings
60
80
100
60
80
100
5
8
15
1
2
80
150
- 65 ~ 150
www.fairchildsemi.com
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C

TIP102TUNL Summary of contents

  • Page 1

    ... P Collector Dissipation (T C Collector Dissipation (T T Junction Temperature J T Storage Temperature STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 =4V, I =3A (Min Equivalent Circuit B TO-220 1 2.Collector 3.Emitter ...

  • Page 2

    ... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE C Output Capacitance ob * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 T =25°C unless otherwise noted a Test Condition : TIP100 I = 30mA TIP101 : TIP102 : TIP100 ...

  • Page 3

    ... V (sat (sat) CE 100 0 [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 10 1 0.1 0.01 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 10k 300 200 100 A B 100 0.1 10k I = 500 I ...

  • Page 4

    ... Mechanical Dimensions © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 TO220 4 www.fairchildsemi.com ...

  • Page 5

    ... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...