MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 10

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 3:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Pad Assignment (Top View) 52-Pad LGA
Notes:
1. These pads are currently NC and are shown for future placement
2. These pads are currently NC and are shown for future placement
OA
OB
OC
OD
OE
OF
DNU/
DNU
CE4#
NC
V
NC
NC
NC
0
SS
2
Micron Confidential and Proprietary
M
A
D
G
H
K
N
B
C
E
F
L
J
8Gb Asychronous/Synchronous NAND Flash Memory
WE#-2
I/O0-2
I/O1-2
I/O2-2
CE3#
ALE-1
DNU/
V
1
CC
2
1
1
1
1
ALE-2
WP#-1
I/O1-1
I/O3-1
V
V
2
SS
SS
10
1
Top View, Pads Down
CLE-2
I/O3-2
WE#-1
CLE-1
I/O0-1
I/O2-1
V
3
SS
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
WP#-2
I/O4-2
CE2#
I/O6-1
I/O4-1
R/B#
CE#
5
1
1
1
RE#-2
I/O7-1
I/O5-1
V
V
V
6
CC
SS
CC
1
I/O7-2
I/O6-2
I/O5-2
R/B3#
R/B2#
RE#-1
DNU/
V
7
CC
1
2
1
1
1
General Description
©2008 Micron Technology, Inc. All rights reserved.
R/B4#
DNU/
DNU
DNU
V
NC
NC
8
SS
2
2
Advance