MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 122

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Quantity
Price
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Figure 82:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
W/R#
R/B#
DQS
DQx
CE#
ALE
CLK
CLE
h
1
COPYBACK (2 of 3)
t DQSD
t DQSCK
Output
Data
Micron Confidential and Proprietary
t DQSHZ
t RHW
8Gb Asychronous/Synchronous NAND Flash Memory
85h
t CAD
122
5 Address
Cycles
t CAD x 5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
85h
t CAD
2 Address
Cycles
t CALS
t CAD + t ADL
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
t DQSS
Timing Diagrams
Data
t CALS
Driven
Advance
2

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