MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 135

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 99:
Figure 100: PROGRAM PAGE Operation with CHANGE WRITE COLUMN
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
I/Ox (DQx)
(DQx)
WE#
RDY
CE#
ALE
RE#
I/Ox
CLE
WE#
ALE
CE#
CLE
t WC
80h
80h
PROGRAM PAGE Operation with CE# “Don’t Care”
add 1
Col
add 2
Col
add 1
Row
Address (5 cycles)
add 2
Row
add 3
Row
t ADL
D
M
Micron Confidential and Proprietary
IN
Serial input
8Gb Asychronous/Synchronous NAND Flash Memory
WE#
CE#
D
N
IN
COLUMN command
CHANGE WRITE
85h
135
Data
t CS
add 1
Column address
t WP
Col
input
t CH
add 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Col
t CCS
D
P
IN
Serial input
D
Q
IN
10h
t WB
©2008 Micron Technology, Inc. All rights reserved.
Data
Timing Diagrams
t PROG
input
READ STATUS
command
70h
Don’t Care
t WHR
Don’t Care
Advance
Status
10h