MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 137

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 103: COPYBACK
Figure 104: ERASE BLOCK Operation
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
(DQx)
WE#
RDY
ALE
I/Ox
CLE
CE#
RE#
(DQx)
I/Ox
WE#
RDY
CLE
ALE
CE#
RE#
00h
t WC
add 1
Col
t WC
60h
add 2
Col
add 1
Row
add 1
Row
Row address
add 2
add 2
Row
Row
add 3
Row
add 3
Row
(or 30h)
35h
Micron Confidential and Proprietary
t WB
Busy
D0h
t R
t WB
8Gb Asychronous/Synchronous NAND Flash Memory
85h
add 1
137
Busy
t BERS
Col
add 2
Col
add 1
Row
Micron Technology, Inc., reserves the right to change products or specifications without notice.
READ STATUS
add 2
Row
command
70h
add 3
Row
t WHR
t ADL
Data
1
Data Input
Optional
I/O0 = 0, Pass
I/O0 = 1, Fail
Status
Data
N
©2008 Micron Technology, Inc. All rights reserved.
10h
t WB
Timing Diagrams
t PROG
Busy
READ STATUS
command
70h
Don’t Care
t WHR
Don’t Care
Advance
Status