MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 139

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 106: 48-Pin TSOP Type 1 OCPL (WC Package Code)
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
12.00 ±0.08
24
1
0.15
+0.03
-0.02
Notes:
1. All dimensions are in millimeters.
20.00 ±0.25
18.40 ±0.08
Micron Confidential and Proprietary
See detail A
8Gb Asychronous/Synchronous NAND Flash Memory
139
1.20 MAX
48
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.25 for
reference only
0.50 for
reference only
0.10
0.10
+0.10
-0.05
Package Dimensions
©2008 Micron Technology, Inc. All rights reserved.
Package width and length do
not include mold protrusion.
Allowable protrusion is
0.25 per side.
Mold compound:
Plated lead finish:
Detail A
Epoxy novolac
100% Sn
0.27 MAX
0.17 MIN
0.80
Advance
0.50 ±0.1
0.25
Gage
plane