MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 14

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Addressing and Memory Map
Device and Array Organization
Figure 6:
Figure 7:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Device Organization for Single-Die Package (TSOP/BGA)
Device Organization for Single-Die Package (LGA)
Notes:
1. Signal names not in parentheses are for TSOP packages. Signal names in parentheses are for
NAND Flash devices do not contain dedicated address pins. Addresses are loaded using
a 5-cycle sequence shown in Table 2 on page 23.
I/O[7:0] (DQ[7:0])
BGA packages.
WP# (WP#-1)
ALE (ALE-1)
CLE (CLE-1)
RE# (W/R#)
WE# (CLK)
N/A (DQS)
I/O[7:0]-1
WE#-1
WP#-1
ALE-1
RE#-1
CLE-1
Micron Confidential and Proprietary
CE#
CE#
8Gb Asychronous/Synchronous NAND Flash Memory
Package
Package
14
Target 1
Target 1
LUN 1
LUN 1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Addressing and Memory Map
©2008 Micron Technology, Inc. All rights reserved.
R/B#
R/B#
Advance

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