MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 141

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Figure 108: 100-Ball VBGA (Package Code H1), 12×18
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Dimensions
apply to solder
balls post-reflow.
Pre-reflow balls
are Ø0.42 on Ø0.4
SMD ball pads.
100X Ø0.45
Seating
16
plane
0.1 A
8
5
1 TYP
1 TYP
7
1 TYP
A
Notes:
10
9
1. All dimensions in
8
7
12 ±0.1
6
9
5
4
Micron Confidential and Proprietary
4.5
6 ±0.05
3
2
millimeters
8Gb Asychronous/Synchronous NAND Flash Memory
1
A
B
D
E
F
G
H
J
K
L
M
N
P
T
U
Exposed
plated features
in all corners
are floating
nonbiased metal.
141
9 ±0.05
Ball A1 ID
.
0.64 ±0.05
18 ±0.1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.0 MAX
Solder ball material: SAC305
Substrate material: plastic laminate
Mold compound: epoxy novolac
(96.5% Sn, 3% Ag, 0.5% Cu)
Ball A1 ID
Package Dimensions
©2008 Micron Technology, Inc. All rights reserved.
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