MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 23

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Figure 16:
Figure 17:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
t
IOL vs. Rp (V
Fall and
Notes:
t
Rise (V
1.
2.
3.
4. See TC values in Figure 19 on page 24 for TC and approximate Rp value.
I(mA)
CC
V
t
t
t
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
Q = 3.3V)
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
CC
-1
Q = 1.8V)
0
t
Rise are calculated at 10 percent and 90 percent points.
Micron Confidential and Proprietary
0
2000
t Fall
8Gb Asychronous/Synchronous NAND Flash Memory
2
4000
4
23
6000
TC
Rp
0
t Rise
8000
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
IOL at 3.60V (max)
10000
4
12000
VccQ 1.8V
6
©2008 Micron Technology, Inc. All rights reserved.
Bus Operation
Advance

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