MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 48

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Table 8:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Byte
129–130
131–132
133–134
135–136
137–138
139–140
141–142
144–145
146–147
148–149
143
150
Timing mode support
Bit[15:6]: Reserved (0)
Bit 5: 1 = supports timing mode 5
Bit 4: 1 = supports timing mode 4
Bit 3: 1 = supports timing mode 3
Bit 2: 1 = supports timing mode 2
Bit 1: 1 = supports timing mode 1
Bit 0: 1 = supports timing mode 0, shall be 1
Program cache timing mode support
Bit[15:6]: Reserved (0)
Bit 5: 1 = supports timing mode 5
Bit 4: 1 = supports timing mode 4
Bit 3: 1 = supports timing mode 3
Bit 2: 1 = supports timing mode 2
Bit 1: 1 = supports timing mode 1
Bit 0: 1 = supports timing mode 0
t
t
t
t
Source synchronous timing mode support
Bit[15:5]: Reserved (0)
Bit 4: 1 = supports timing mode 4
Bit 3: 1 = supports timing mode 3
Bit 2: 1 = supports timing mode 2
Bit 1: 1 = supports timing mode 1
Bit 0: 1 = supports timing mode 0
Source synchronous features
Bit[7:2]: Reserved (0)
Bit 1: 1 = typical capacitance values present
Bit 0: 0 = use
CLK input pin capacitance per chip enable, typical
I/O pin capacitance per chip enable, typical
Input capacitance per chip enable, typical
Input pin capacitance per chip enable, maximum
PROG Maximum PROGRAM PAGE time (µs)
BERS Maximum BLOCK ERASE time (µs)
R Maximum PAGE READ time (µs)
CCS Minimum change column setup time (ns)
Parameter Page Data Structure (continued)
t
CAD MIN value
Description
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT29F8G08ABABAWP
MT29F8G08ABABAWP
MT29F8G08ABABAWP
MT29F8G08ABABAWP
MT29F8G08ABCBBWP
MT29F8G08ABCBBWP
MT29F8G08ABCBBWP
MT29F8G08ABCBBWP
MT29F8G08ABABAC3
MT29F8G08ABABAC3
MT29F8G08ABABAC3
MT29F8G08ABABAC3
MT29F8G08ABCBBH1
MT29F8G08ABCBBH1
MT29F8G08ABCBBH1
MT29F8G08ABCBBH1
MT29F8G08ABABA
MT29F8G08ABABA
MT29F8G08ABCBB
MT29F8G08ABCBB
Device
Command Definitions
©2008 Micron Technology, Inc. All rights reserved.
1Fh, 00h
1Fh, 00h
F4h, 01h
B8h, 0Bh
19h, 00h
C8h, 00h
00h, 00h
1Fh, 00h
00h, 00h
3Fh, 00h
24h, 00h
00h, 00h
1Ch, 00h
2Dh, 00h
00h, 00h
3Fh, 00h
28h, 00h
0Ah
05h
00h
02h
Values
Advance

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