MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 49

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Table 8:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Byte
Vendor block
164–165
152-163
151
166
167
168
169
170
171
172
173
174
175
Driver strength support
Bit[7:3]: Reserved (0)
Bit 2: 1 = Supports overdrive (2 drive strength)
Bit 1: 1 = Supports overdrive (1 drive strength)
Bit 0: 1 = Supports driver strength settings
Reserved (0)
Vendor-specific revision number
TWO-PLANE PAGE READ support
Bit[7:1]: Reserved (0)
Bit 0: 1 = Support for TWO-PLANE PAGE READ
Read cache support
Bit[7:1]: Reserved (0)
Bit 0: 0 = Does not support Micron-specific read cache
function
READ UNIQUE ID support
Bit[7:1]: Reserved (0)
Bit 0: 0 = Does not support Micron-specific READ
UNIQUE ID
Programmable I/O drive strength support
Bit[7:1]: Reserved (0)
Bit 0: 0 = No support for programmable I/O drive
strength by B8h command
Number of programmable I/O drive strength settings
Bit[7:3]: Reserved (0)
Bit [2:0] = Number of programmable I/O drive strength
settings
Programmable I/O drive strength feature address
Bit[7:0] = Programmable I/O drive strength feature
address
Programmable R/B# pull-down strength support
Bit[7:1]: Reserved (0)
Bit 0: 1 = Support programmable R/B# pull-down
strength
Programmable R/B# pull-down strength feature
address
Bit[7:0] = Feature address used with programmable R/
B# pull-down strength
Number of programmable R/B# pull-down strength
settings
Bit[7:3]: Reserved (0)
Bit[2:0] = Number of programmable R/B# pull-down
strength settings
OTP mode support
Bit[7:2]: Reserved (0)
Bit 0: 0 = Does not support OTP mode
Bit 1: 1 = Supports Get/Set Features command set
Bit 0: 0 = Does not support A5h/A0h/AFh OTP
command set
Parameter Page Data Structure (continued)
Description
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Device
Command Definitions
©2008 Micron Technology, Inc. All rights reserved.
07h
All 00h
01h, 00h
01h
00h
00h
00h
04h
10h
01h
81h
04h
02h
Values
Advance

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