MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 53

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 34:
GET FEATURES (EEh)
Figure 35:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
I/O[7:0] (DQ[7:0])
SET FEATURES (EFh) Operation
GET FEATURES (EEh) Operation
Cycle type
R/B#
The GET FEATURES (EEh) command reads the sub-feature parameters (P1-P4) from the
specified feature address. This command is accepted by the target only when all LUNs
on the target are idle.
Writing EEh to the command register puts the target in get features mode. The target
stays in this mode until another valid command is issued.
When the EEh command is followed by a feature address, the target goes busy for
If the READ STATUS (70h) command is used to monitor for command completion, the
READ MODE (00h) command must be used to re-enable data output mode. During and
prior to data output, use of the SELECT LUN WITH STATUS (78h) command is prohib-
ited prior to and during data output.
After
parameters. When the asynchronous interface is active, one data byte is output per RE#
toggle. When the synchronous interface is active, two data bytes are output per toggle,
one byte for each rising or falling edge of DQS.
I/Ox (DQx)
Cycle type
Command
t
R/B#
EFh
FEAT completes, the host enables data output mode to read the sub-feature
Command
Address
Micron Confidential and Proprietary
EEh
FA
8Gb Asychronous/Synchronous NAND Flash Memory
t ADL
Address
FA
t WB
D
P1
53
IN
t FEAT
D
P2
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RR
D
P3
IN
D
P1
OUT
D
P4
IN
t WB
D
P2
OUT
Command Definitions
©2008 Micron Technology, Inc. All rights reserved.
t FEAT
D
P3
OUT
D
P4
OUT
Advance
t
FEAT.