MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 87

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
During and following multi-LUN operations, the READ STATUS (70h) command is
prohibited. Instead, use the SELECT LUN WITH STATUS (78h) command to monitor
status. This command selects which LUN will report status. When multi-plane
commands are used with multi-LUN operations, the multi-plane commands must also
meet the requirements in “Multi-Plane Operations” on page 86.
See Table 5 on page 39 for the list of commands that can be issued while other LUNs are
busy.
During a multi-LUN operation that involves a PROGRAM-series (80h-10h, 80h-15h, 80h-
11h) operation and a READ operation, the PROGRAM-series operation must be issued
before the READ-series operation. The data from the READ-series operation must be
output to the host before the next PROGRAM-series operation is issued. This is because
the 80h command clears the cache register contents of all cache registers on all planes.
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
87
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Multi-LUN Operations
©2008 Micron Technology, Inc. All rights reserved.
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