MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 94

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Table 29:
Table 30:
Table 31:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Parameter
Array read current
Array program current
Array erase current
I/O burst read current
I/O burst write current
Bus idle current
Standby current (CMOS)
Description
Input capacitance (CLK)
Input capacitance (ALE, CLE, W/R#)
Input/output capacitance (DQ[7:0], DQS)
Input capacitance (CE#, WP#)
Delta clock capacitance
Delta input capacitance
Delta input/output capacitance
Description
Input/output capacitance
ALE, CE#, CLE, R/B#, RE#, WE#,
WP#
Input/output capacitance
(I/O[7:0], DQ[7:0])
Synchronous Device DC and Operating Characteristics
Ball Capacitance: BGA-100 Package
Pin Capacitance: TSOP-48 Package
Notes:
Notes:
Notes:
1. All values are per LUN unless otherwise specified.
1. Verified in device characterization; not 100 percent tested.
2. Test conditions: TA = 25ºC, f = 100MHz, VIN = 0V.
3. Values for C
4. SDP = Single die pacakge.
1. These parameters are verified in device characterization and are not 100 percent tested.Test
2. SDP = Single die package..
conditions: T
t
Cin/Cout
Cin/Cout
Symbol
CK =
CE# = V
t
t
t
t
t
t
CK (MIN); Iout = 0mA
CK =
CK =
CK =
CK =
CK =
WP# = 0V/V
Conditions
Symbol
Micron Confidential and Proprietary
CK
c
C
DC
= 25°C; f = 1 MHz; V
DC
DC
OTHER
, C
C
C
C
t
t
t
t
t
CC
CK (MIN)
CK (MIN)
CK (MIN)
CK (MIN)
CK (MIN)
CK
IN
IO
CK
IN
IO
IN
Q - 0.2V;
8Gb Asychronous/Synchronous NAND Flash Memory
and C
CC
Device
IO
SDP
SDP
(typ) are estimates.
Min
3.35
94
3.5
4
2
IN
Symbol
Icc4w_s
= 0V.
Icc4r_s
I
I
I
Icc5_s
CC
CC
CC
I
SB
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1_s
2_s
3_s
_s
SDP
Typ
3.6
4.5
4
Min
4
Max
10
5
1
Electrical Characteristics
Typ
TBD
TBD
TBD
20
20
20
10
Max
3.85
0.25
4.5
0.5
0.5
5
5
1
©2008 Micron Technology, Inc. All rights reserved.
Unit
Max
pF
pF
TBD
TBD
TBD
50
50
50
50
Unit
pF
pF
pF
pF
pF
pF
pF
1
Notes
Advance
Unit
Notes
1, 2, 3
1, 2, 3
1, 2, 3
mA
mA
mA
mA
mA
mA
µA
1
1
1, 2
1, 2
1, 2
1, 2

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