MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 95

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Table 32:
Table 33:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Description
Input/output capacitance
ALE, CE#, CLE, R/B#, RE#, WE#,
WP#
Input/output capacitance
I/O[7:0]
Parameter
Input pulse levels
Input rise and fall slew rates
Input and output timing levels
Output load: Synchronous interface, nominal output
drive strength
Output load: Asynchronous interface, nominal
output drive strength (VccQ = 1.7
Output load: Asynchronous interface, nominal
output drive strength (VccQ = 2.7
Pad Capacitance: LGA-52 Package
Test Conditions
Notes:
Notes:
1. These parameters are verified in device characterization and are not 100 percent tested.
2. SDP = Single die package.
1. Transmission line delay is assumed to be very small.
2. This test setup applies to all package configurations.
Test conditions: T
Cin/Cout
Cin/Cout
Symbol
1.95V)
3.6V)
Micron Confidential and Proprietary
c
8Gb Asychronous/Synchronous NAND Flash Memory
= 25°C; f = 1 MHz; V
Device
SDP
SDP
95
2
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
= 0V.
0V to V
C
C
C
V
L
L
Value
L
1V/ns
CC
= 30pF
= 50pF
= 5pF
Q/2
Max
10
CC
5
Q
Electrical Characteristics
©2008 Micron Technology, Inc. All rights reserved.
Unit
pF
pF
Notes
Notes
1, 2
Advance
2
2
1
1

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