MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 96

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Table 34:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Parameter
AC input high
voltage
AC input low
voltage
Output high
voltage
Output low
voltage
Input leakage
current
Output
leakage
current
Output low
current (R/B#)
3.3V VccQ Device Operating Characteristics
Any input VIN =
0V to VCCQ (all
disabled; VOUT
under test=0V)
ALE, CLE, CLK
= 0V to VCCQ
CE#, DQ[7:0],
IOH = –400ìA
(WE#), CLK#,
IOL = 2.1mA
DQS, DQS#,
W/R# (RE#),
VOL = 0.4V
Condition
Notes:
other pins
I/Os are
WP#
1. All leakage currents are per LUN.
2. DC characteristics may need to be relaxed if R/B# pull-down strength is not set to “Full.” See
Table 13 on page 14 for additional details.
IOL (R/B#)
Symbol
VIH (AC)
VIL (AC)
VOH
VOL
ILO
ILI
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
0.8 × VccQ
0.67 ×
VccQ
Min
–0.3
–
–
–
8
96
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Typ
10
–
–
–
–
–
–
VccQ + 0.3
0.2 × VccQ
Max
±10
±10
0.4
–
–
Electrical Characteristics
©2008 Micron Technology, Inc. All rights reserved.
Unit
mA
µA
µA
V
V
V
V
Notes
–
–
–
–
1
1
2
Advance