HYB39S256800CTL-8 Infineon Technologies, HYB39S256800CTL-8 Datasheet - Page 24

• Manufacturer Part Number: HYB39S256800CTL-8
• Manufacturer: Infineon Technologies

Specifications of HYB39S256800CTL-8

• Lead Free Status / Rohs Status: Not Compliant

4 2. Minimum Read to Write Interval
4. 3. Non-Minimum Read to Write Interval
INFINEON Technologies
t
t
(Burst Length = 4, CAS latency = 2, 3)
CLK
DQM
Command
CAS
latency = 2
CAS
latency = 3
CK2
CK3
t
(Burst Length = 4, CAS latency = 2)
CLK
DQM
Command
CAS
latency = 2
CK2
, DQ’s
, DQ’s
, DQ’s
NOP
T0
T0
NOP
"H" or "L"
"H" or "L"
Read A
T1
T1
NOP
NOP
T2
T2
Activate
Bank A
DOUT A0
NOP
t
T3
T3
DQZ
NOP
Must be Hi-Z before
the Write Command
24
DOUT A0
DOUT A1
Read A
t
Read A
T4
DQZ
T4
1 Clk Interval
Must be Hi-Z before
the Write Command
t
DQW
NOP
Write A
T5
T5
DIN A0
256-MBit Synchronous DRAM
HYB39S256400/800/160CT(L)
t
DQW
Write B
DIN B0
DIN B0
T6
T6
DIN A1
NOP
NOP
DIN B1
DIN B1
T7
T7
DIN A2
NOP
NOP
DIN B2
DIN B2
T8
T8
DIN A3
NOP
SPT03940
SPT03939