2SK30ATM Toshiba, 2SK30ATM Datasheet

2SK30ATM

Manufacturer Part Number
2SK30ATM
Description
Manufacturer
Toshiba
Datasheet

Specifications of 2SK30ATM

Channel Type
N
Configuration
Single
Drain-gate Voltage (max)
-50V
Operating Temperature (min)
-55C
Operating Temperature (max)
125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / Rohs Status
Not Compliant

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Low Noise Pre-Amplifier, Tone Control Amplifier and
DC-AC High Input Impedance Amplifier Circuit
Applications
Absolute Maximum Ratings
Electrical Characteristics
High breakdown voltage: V
High input impedance: I
Low noise: NF = 0.5 dB (typ.)
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
(V
classification R: 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50
DS
= 15 V, V
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
GSS
GS
GDS
= −1 nA (max) (V
= 0, R
(Ta = 25°C)
= −50 V
G
(Ta = 25°C)
V
V
Symbol
Symbol
2SK30ATM
GS (OFF)
= 100 kΩ, f = 120 Hz)
(BR) GDS
V
⎪Y
I
I
C
T
C
GSS
DSS
P
NF
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
GS
V
V
V
V
V
V
V
V
R
GS
DS
DS
DS
DS
GS
GD
DS
G
= −30 V)
−55~125
= 100 kΩ, f = 120 Hz
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 15 V, V
= −30 V, V
= 0, V
= −10 V, V
−50
100
125
10
1
G
DS
= −100 μA
Test Condition
D
GS
GS
= 0, f = 1 MHz
GS
= 0.1 μA
DS
DS
= 0
= 0, f = 1 kHz
= 0
= 0
= 0, f = 1 MHz
Unit
mW
mA
°C
°C
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.4
Min
−50
0.3
1.2
Typ.
8.2
2.6
0.5
2SK30ATM
2-5F1C
TO-92
SC-43
2007-11-01
−1.0
−5.0
Max
6.5
5.0
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V

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2SK30ATM Summary of contents

Page 1

... MHz C V iss − MHz C V rss 100 kΩ 120 2SK30ATM V JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1C Weight: 0.21 g (typ.) Min Typ. Max ⎯ ⎯ −1.0 −50 ⎯ ⎯ ⎯ 0.3 6.5 −0.4 ⎯ −5.0 ⎯ ⎯ 1.2 ⎯ ⎯ ...

Page 2

... 2 2SK30ATM 2007-11-01 ...

Page 3

... 3 2SK30ATM 2007-11-01 ...

Page 4

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SK30ATM 2007-11-01 ...

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