M5M5256DVP-70GI Renesas Electronics America, M5M5256DVP-70GI Datasheet

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M5M5256DVP-70GI

Manufacturer Part Number
M5M5256DVP-70GI
Description
Manufacturer
Renesas Electronics America
APPLICATION
PACKAGE
DESCRIPTION
FEATURE
organized as 32,768-words by 8-bits which is f abricated using
high-perf ormance 3 poly silicon CMOS technology . The use of
resistiv e load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough f or battery back-up application. It is ideal f or the memory
sy stems which require simple interf ace.
outline package.
The M5M5256DFP,VP is 262,144-bit CMOS static RAMs
Especially the M5M5256DVP are packaged in a 28-pin thin small
M5M5256DFP,VP
M5M5256DFP,VP
M5M5256DFP,VP
•Single 3.0
•No clocks, no ref resh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prev ents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current .......... 0.05µA(ty p.)
M5M5256DFP
M5M5256DVP
Small capacity m emory units
Ty pe
-70XG
-70GI
-70G
~
5.5V power supply
Access
(max)
70ns
70ns
70ns
: 28 pin 450 mil SOP
: 28pin 8 X 13.4 mm TSOP
time
Temperature
-40~85
Oprating
0~70
0~70
°C
°C
°C
2
Power supply current
(Vcc= 5.5V)
(Vcc= 3.6V)
Activ e
45mA
25mA
(max)
M5M5256DFP,VP -70G,-70GI,-70XG
(Vcc= 3.0V Typical)
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Stand-by
(Vcc= 5.5V)
(Vcc= 3.6V)
(Vcc= 5.5V)
(Vcc= 3.6V)
(Vcc= 5.5V)
(Vcc= 3.6V)
0.05µA
2.4µA
20µA
12µA
40µA
24µA
(max)
5µA
PIN CONFIGURATION (TOP VIEW)
22
23
24
25
26
27
28
1
2
3
4
5
6
7
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
A11
A9
A8
A13
Vcc
A14
A12
A7
A6
A5
A4
A3
/OE
/W
10
11
12
13
14
Outline 28P2W-C (FP)
1
2
3
4
5
6
7
8
9
Outline 28P2C-A (VP)
M5M5256DVP
RENESAS LSIs
18
17
15
28
27
26
25
24
23
22
21
20
19
16
GND
Vcc
/W
A13
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
A10
A0
A1
A2
/S
21
20
19
18
17
16
15
14
13
12
11
10
9
8
1

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