C8051F336-GMR Silicon Laboratories Inc, C8051F336-GMR Datasheet - Page 33

Microcontrollers (MCU) 16KB 10ADC 10DAC 768Ram MCU Lead Free

C8051F336-GMR

Manufacturer Part Number
C8051F336-GMR
Description
Microcontrollers (MCU) 16KB 10ADC 10DAC 768Ram MCU Lead Free
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of C8051F336-GMR

Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Program Memory Type
Flash
Program Memory Size
16 KB
Data Ram Size
768 B
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
QFN-20
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F336DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
On-chip Dac
10 bit
Package
20QFN
Device Core
8051
Family Name
C8051F336
Maximum Speed
25 MHz
Ram Size
768 Byte
Operating Temperature
-40 to 85 °C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C8051F336-GMR
Manufacturer:
SILICON
Quantity:
100
Part Number:
C8051F336-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
C8051F336-GMR
Manufacturer:
SILICON
Quantity:
13 282
Part Number:
C8051F336-GMR
0
Table 6.9. Temperature Sensor Electrical Characteristics
V
Table 6.10. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
Internal Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
DD
DD
= 3.0 V,
= 3.0 V; –40 to +85 °C unless otherwise specified.
40 to +85 °C unless otherwise specified.
Conditions
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
Sample Rate = 200 ksps; VREF = 3.0 V
REFBE = ‘1’ or TEMPE = ‘1’
Conditions
Temp = 0 °C
Temp = 0 °C
Rev.1.0
Min
C8051F336/7/8/9
2.35
Min
0
± 0.2
2.25
11.6
Typ
785
23
2.42
–0.6
Typ
200
7.5
30
30
3
3
Max
Max
2.50
V
10
50
DD
mV/°C
µV/°C
ppm/°C
Units
µV/µA
Units
mV/V
mV
mV
°C
mA
ms
µA
µA
µs
V
V
33

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