BSS84P H6327 Infineon Technologies, BSS84P H6327 Datasheet

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BSS84P H6327

Manufacturer Part Number

BSS84P H6327

Description

INFBSS84P H6327 SP000702496_P-KANAL_TR_R

Manufacturer

Infineon Technologies

Datasheet

1.BSS84P_H6327.pdf (8 pages)

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Download datasheet (146Kb)

Feature

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·

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·

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SIPMOS  Small-Signal-Transistor

Type

BSS 84 P

BSS 84 P

Maximum Ratings, at

Parameter

Continuous drain current

T

T

Pulsed drain current

T

Avalanche energy, single pulse

I

Avalanche energy, periodic limited by T

Reverse diode dv/dt

I

Gate source voltage

Power dissipation

T

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

D

S

A

A

A

A

P-Channel

Enhancement mode

Logic Level

Avalanche rated

dv/dt rated

Qualified according to AEC Q101

=-0.17 A , V

=-0.17A, V

Halogen-free according to IEC61249-2-21

=25°C

=70°C

=25°C

=25°C

Rev 2.6

DS

DD

=-48V, di/dt=-200A/µs, T

=-25V, R

PG-SOT-23

PG-SOT-23 H6433:10000pcs/r. YBs

Package

GS

T A

=25

= 25 °C, unless otherwise specified

Page 1

jmax

=150°C

Tape and Reel

H6327:3000pcs/r.

jmax

Symbol

I

I

E

E

dv/dt

V

P

T

D

D puls

AS

AR

GS

tot

j ,

T

stg

Marking

YBs

-55... +150

55/150/56

Product Summary

V

R

I

D

Value

0.036

-0.17

-0.14

-0.68

DS

DS(on)

0.36

±20

2.6

-6

PG-SOT-23

Gate

pin1

3

2011-06-01

-0.17

BSS 84 P

-60

8

1

Unit

A

mJ

kV/µs

V

W

°C

Source

pin 2

VPS05161

Drain

pin 3

V

A

2

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