XC3S250E-4FTG256C Xilinx Inc, XC3S250E-4FTG256C Datasheet - Page 35

IC SPARTAN-3E FPGA 250K 256-FTBG

XC3S250E-4FTG256C

Manufacturer Part Number
XC3S250E-4FTG256C
Description
IC SPARTAN-3E FPGA 250K 256-FTBG
Manufacturer
Xilinx Inc
Series
Spartan™-3Er
Datasheet

Specifications of XC3S250E-4FTG256C

Total Ram Bits
221184
Number Of Logic Elements/cells
5508
Number Of Labs/clbs
612
Number Of I /o
172
Number Of Gates
250000
Voltage - Supply
1.14 V ~ 1.26 V
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C
Package / Case
256-LBGA
No. Of Logic Blocks
5508
No. Of Gates
250000
No. Of Macrocells
5508
No. Of Speed Grades
4
No. Of I/o's
190
Clock Management
DLL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
122-1482

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0
Block RAM
For additional information, refer to the “Using Block RAM”
chapter in UG331.
Spartan-3E devices incorporate 4 to 36 dedicated block
RAMs, which are organized as dual-port configurable
18 Kbit blocks. Functionally, the block RAM is identical to
the Spartan-3 architecture block RAM. Block RAM synchro-
nously stores large amounts of data while distributed RAM,
previously described, is better suited for buffering small
amounts of data anywhere along signal paths. This section
describes basic block RAM functions.
Each block RAM is configurable by setting the content’s ini-
tial values, default signal value of the output registers, port
aspect ratios, and write modes. Block RAM can be used in
single-port or dual-port modes.
Arrangement of RAM Blocks on Die
The block RAMs are located together with the multipliers on
the die in one or two columns depending on the size of the
device. The XC3S100E has one column of block RAM. The
Spartan-3E devices ranging from the XC3S250E to
XC3S1600E have two columns of block RAM.
shows the number of RAM blocks, the data storage capac-
ity, and the number of columns for each device. Row(s) of
CLBs are located above and below each block RAM col-
umn.
Table 21: Number of RAM Blocks by Device
Immediately adjacent to each block RAM is an embedded
18x18 hardware multiplier. The upper 16 bits of the block
RAM's Port A Data input bus are shared with the upper 16
bits of the A multiplicand input bus of the multiplier. Similarly,
the upper 16 bits of Port B's data input bus are shared with
the B multiplicand input bus of the multiplier.
DS312-2 (v3.8) August 26, 2009
Product Specification
XC3S100E
XC3S250E
XC3S500E
XC3S1200E
XC3S1600E
Device
R
Number of
Blocks
Total
RAM
12
20
28
36
4
Addressable
Locations
221,184
368,640
516,096
663,552
73,728
(bits)
Total
Columns
Number
Table 21
of
1
2
2
2
2
www.xilinx.com
The Internal Structure of the Block RAM
The block RAM has a dual port structure. The two identical
data ports called A and B permit independent access to the
common block RAM, which has a maximum capacity of
18,432 bits, or 16,384 bits with no parity bits (see parity bits
description in
set of data, control, and clock lines for synchronous read
and write operations. There are four basic data paths, as
shown in
1. Write to and read from Port A
2. Write to and read from Port B
3. Data transfer from Port A to Port B
4. Data transfer from Port B to Port A
Number of Ports
A choice among primitives determines whether the block
RAM functions as dual- or single-port memory. A name of
the form RAMB16_S[w
itive, where the integers w
path width at ports A and B, respectively. Thus, a
RAMB16_S9_S18 is a dual-port RAM with a 9-bit Port A
and an 18-bit Port B. A name of the form RAMB16_S[w]
identifies the single-port primitive, where the integer w
specifies the total data path width of the lone port A. A
RAMB16_S18 is a single-port RAM with an 18-bit port.
Port Aspect Ratios
Each port of the block RAM can be configured indepen-
dently to select a number of different possible widths for the
data input (DI) and data output (DO) signals as shown in
Table
4
1
Read
Write
Write
Read
22.
Figure
Figure 30: Block RAM Data Paths
Table
30:
22). Each port has its own dedicated
A
Spartan-3E
Block RAM
]_S[w
Dual-Port
A
and w
B
] calls out the dual-port prim-
Functional Description
B
specify the total data
DS312-2_01_020705
Write
Read
Read 3
Write
2
35

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