TEA1610PN NXP Semiconductors, TEA1610PN Datasheet

AC/DC Switching Converters RESONANT SMPS

TEA1610PN

Manufacturer Part Number
TEA1610PN
Description
AC/DC Switching Converters RESONANT SMPS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TEA1610PN

Mounting Style
SMD/SMT
Package / Case
SOT-38
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
TEA1610P/N5,112
1. General description
2. Features
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a
zero-voltage switching resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down
function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
I
I
I
I
Fig 1. Basic configuration
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Integrated high voltage level-shift
function
Integrated high voltage bootstrap diode
Low start-up current (green function)
Adjustable dead time
ground
signal
TEA1610
V
DD
power ground
V
HS
bridge voltage
supply
(high side)
MOSFET
SWITCH
I
I
I
I
CIRCUIT
BRIDGE
HALF-
Transconductance error amplifier for
ultra high-ohmic regulation feedback
Latched shut-down circuit for
overcurrent and overvoltage protection
Adjustable minimum and maximum
frequencies
Undervoltage lockout
CONVERTER
RESONANT
mgu336
Product data sheet

Related parts for TEA1610PN

TEA1610PN Summary of contents

Page 1

TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Rev. 03 — 26 March 2007 1. General description The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for ...

Page 2

... NXP Semiconductors 3. Applications I TV and monitor power supplies 4. Quick reference data Table 1. Symbol GH(source) I GL(source) I GH(sink) I GL(sink) f bridge(max) V I(CM) [1] The frequency of the oscillator depends on the value of capacitor C and the charge/discharge currents I [2] This parameter applies specifically to the error amplifier. ...

Page 3

... NXP Semiconductors 6. Block diagram SGND ERROR AMPLIFIER 5 n.c. Fig 2. Block diagram TEA1610T_P_3 Product data sheet Zero-voltage-switching resonant converter controller BOOTSTRAP SUPPLY SHIFTER TEA1610 reset start/stop oscillation shut-down start- VCO IRS REF Rev. 03 — 26 March 2007 TEA1610P; TEA1610T 8 7 LEVEL HIGH SIDE ...

Page 4

... NXP Semiconductors 7. Pinning information 7.1 Pinning Fig 3. Pin configuration for TEA1610P 7.2 Pin description Table 3. Symbol I- I+ VCO PGND n. DD(F) SGND IFS CF IRS SD V REF TEA1610T_P_3 Product data sheet Zero-voltage-switching resonant converter controller REF VCO 3 14 IRS 4 13 PGND CF TEA1610P ...

Page 5

... NXP Semiconductors 8. Functional description 8.1 Start-up When the applied voltage at V switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the bootstrap capacitor (C used for the floating supply of the high side driver. ...

Page 6

... NXP Semiconductors 8.2 Oscillator The internal oscillator is a current-controlled oscillator that generates a sawtooth output. The frequency of the sawtooth is determined by the external capacitor C flowing into the IFS and IRS pins. The minimum frequency and the dead time are set by the capacitor C and R ...

Page 7

... NXP Semiconductors 8.4 Minimum frequency resistor The R f(min) current input (held at a temperature independent voltage level of 0.6 V). The charge current of the capacitor C The R f(min) charge current (rising slope) of the C frequency is defined by this minimum charge current ( IRS1 t = IRS1 f osc min f bridge min 8 ...

Page 8

... NXP Semiconductors f bridge max T = OSC Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies both the dead time and the oscillator frequency show a decay. The frequency of the oscillator depends on the value of capacitor C voltage swing V the accuracy decreases due to delays in the circuit. ...

Page 9

... NXP Semiconductors During shut-down mode, pin input current. This clamp prevents V supply current to the TEA1610 in shut-down mode. When the TEA1610 is in the shut-down mode, it can be activated again only by lowering V below the V DD new start-up cycle can commence (see Fig 8. Shut-down TEA1610T_P_3 Product data sheet TEA1610P ...

Page 10

... NXP Semiconductors 9. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Voltages Currents I IFS I IRS I REF Power and temperature P tot T amb T stg Handling V ESD [ recommended that a 100 nF capacitor be placed as close as possible to the V Figure [2] Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. ...

Page 11

... NXP Semiconductors 11. Characteristics Table 6. Characteristics All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; V and tested using the circuit shown in amb Symbol Parameter High voltage pins and SH DD(F) I leakage current L Supply pin V DD ...

Page 12

... NXP Semiconductors Table 6. Characteristics …continued All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; V and tested using the circuit shown in amb Symbol Parameter f maximum bridge bridge(max) frequency V CF trip level LOW CF( trip level HIGH ...

Page 13

... NXP Semiconductors Table 6. Characteristics …continued All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; V and tested using the circuit shown in amb Symbol Parameter V maximum VCO VCO(max) voltage I maximum output VCO(max) current V start VCO voltage ...

Page 14

... NXP Semiconductors 12. Application information An application example of a zero-voltage switching resonant converter application using TEA1610 is shown in level of 9 the 7.5 V Zener diode and the half-bridge is not driven. In the on-mode the TEA1610 starts-up with a high-ohmic bleeder resistor. After passing the level for start of oscillation, the TEA1610 is in normal operating mode and consumes the normal supply current delivered by the 12 V supply ...

Page 15

V R VDD C VDD 7 on/off bootstrap diode TEA1610 SUPPLY signal ground SGND 9 regulator feedback ERROR AMPLIFIER 3 VCO ...

Page 16

... NXP Semiconductors 13. Test information 13.1 Quality information The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable. TEA1610T_P_3 Product data sheet TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Rev. 03 — 26 March 2007 © NXP B.V. 2007. All rights reserved ...

Page 17

... NXP Semiconductors 14. Package outline DIP16: plastic dual in-line package; 16 leads (300 mil); long body pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions UNIT max. min. max. mm 4.7 0.51 3.7 inches 0.19 0.02 0.15 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. ...

Page 18

... NXP Semiconductors SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.20 1.45 mm 1.65 0.25 0.05 1.25 0.008 0.057 inches 0.065 0.01 0.002 0.049 Note 1 ...

Page 19

... Modifications: In TEA1610T_P_2 20070206 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Equations modified in frequency TEA1610T_P_1 ...

Page 20

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 21

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Functional description . . . . . . . . . . . . . . . . . . . 5 8.1 Start-up 8.2 Oscillator 8.3 Dead time resistor 8.4 Minimum frequency resistor . . . . . . . . . . . . . . . 7 8 ...

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