DS1225Y-200+ Dallas Semiconductor, DS1225Y-200+ Datasheet

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DS1225Y-200+

Manufacturer Part Number
DS1225Y-200+
Description
SRAM, Nonvolatile, 2k x 8, 200 nS, DIP28
Manufacturer
Dallas Semiconductor
Datasheet

Specifications of DS1225Y-200+

Capacitance, Input
10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±1 μA
Current, Operating
75 mA
Current, Output, Leakage
±1
Data Retention
10 yrs.
Density
64K
Interface
Parallel Bus
Memory Type
Non-Volatile SRAM
Organization
2K×8
Package Type
720 EMOD
Temperature, Operating
0 to +70 °C
Time, Access
200 ns
Time, Address Hold
5
Time, Fall
5 ns
Time, Rise
5 ns
Voltage, Input, High
5 V
Voltage, Input, Low
0.8 V
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
FEATURES
DESCRIPTION
The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for micro-
processor interfacing.
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 150 ns
Full ±10% operating range
Optional industrial temperature range of
-40°C to +85°C, designated IND
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
1 of 8
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A12
DQ0-DQ7
V
GND
CE
WE
OE
CC
24-Pin ENCAPSULATED PACKAGE
GND
DQ0
DQ1
DQ2
A12
A7
A6
A5
A4
A3
A2
A1
A0
NC
64k Nonvolatile SRAM
720-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DS1225Y
121907

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DS1225Y-200+ Summary of contents

Page 1

... The NV SRAM can be used in place of existing SRAMs directly conforming to the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for micro- processor interfacing ...

Page 2

... Hand Solder Only) SYMBOL MIN TYP V 4 See Note 10 SYMBOL MIN TYP CCS1 1 3 CCS2 1 CCO1 I CCO1 V 4. DS1225Y (T : See Note 10) A MAX UNITS NOTES 5.5 V VCC V +0 ± 10%) CC MAX UNITS NOTES μA +1.0 μA +1 ...

Page 3

... OH t 150 170 WC t 100 120 WR1 WR2 t 35 ODW OEW DH1 DH2 MIN TYP I See Note 10; V =5.0V ± 10%) CC DS1225Y-200 UNITS MAX MIN MAX 200 ns 170 200 ns 80 100 ns 170 200 200 ns 150 MAX UNITS DS1225Y NOTES 25°C) A NOTES ...

Page 4

... SYMBOL MIN 100 REC SYMBOL MIN during a write cycle, the output buffers remain in a high impedance IH is measured from the latter MAX UNITS NOTES μs 11 μs μ 25°C) A MAX UNITS NOTES years 9 DS1225Y ...

Page 5

... DS1225Y-150IND+ -40°C to +85°C DS1225Y-170 0°C to +70°C DS1225Y-170+ 0°C to +70°C DS1225Y-200 0°C to +70°C DS1225Y-200+ 0°C to +70°C DS1225Y-200IND -40°C to +85°C DS1225Y-200IND+ -40°C to +85°C + Denotes lead-free/RoHS-compliant product. is defined as starting at the date TEST CONDITIONS Output Load: 100pF + 1TTL Gate Input Pulse Levels: 0-3 ...

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