GAL22V10D-25LPN Lattice, GAL22V10D-25LPN Datasheet
GAL22V10D-25LPN
Specifications of GAL22V10D-25LPN
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GAL22V10D-25LPN Summary of contents
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... GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified. Copyright © 2006 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. ...
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... Lead-Free Packaging Commercial Grade Specifications Industrial Grade Specifications Part Number Description GAL22V10D Device Name Speed (ns Low Power Power Q = Quarter Power Specifications GAL22V10 XXXXXXXX Grade Blank = Commercial I = Industrial P = Plastic DIP Package PN = Lead-Free Plastic DIP J = PLCC JN = Lead-Free PLCC S = SOIC ...
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Output Logic Macrocell (OLMC) The GAL22V10 has a variable number of product terms per OLMC. Of the ten available OLMCs, two OLMCs have access to eight product terms (pins 14 and 23, DIP pinout), two have ten product terms (pins ...
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... The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information. 2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester ground degradation. Characterized but not 100% tested. 3) Typical values are at Vcc = 5V and T A Specifications GAL22V10D Specifications GAL22V10 Recommended Operating Conditions 1 Commercial Devices: ...
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... Calculated from fmax with internal feedback. Refer to fmax Description section. 3) Refer to fmax Description section. ° Capacitance ( 1.0 MHz) A SYMBOL PARAMETER C Input Capacitance I C I/O Capacitance I/O *Characterized but not 100% tested. Specifications GAL22V10D Specifications GAL22V10 Over Recommended Operating Conditions COM / IND -10 MIN. MAX — 2.5 6 — 0 — ...
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... Active Low 300Ω + FROM OUTPUT (O/Q) UNDER TEST INCLUDES TEST FIXTURE AND PROBE CAPACITANCE L Specifications GAL22V10 GAL22V10D-4 Output Load Conditions (see figure below) GND to 3.0V 1.5ns 10% – 90% Test Condition 2.0ns 10% – 90 Active High at 1.9V 1. Active Low at 1.0V See Figure C Active High ...
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... Refer to fmax Description section. Characterized initially and after any design or process changes that may affect these parameters. ° Capacitance ( 1.0 MHz) A SYMBOL PARAMETER C Input Capacitance I C I/O Capacitance I/O *Characterized but not 100% tested. Specifications GAL22V10D Specifications GAL22V10 Over Recommended Operating Conditions DESCRIPTION MAXIMUM* UNITS COM COM COM/IND -4 -5 ...