1N5399-E3/51 General Semiconductor / Vishay, 1N5399-E3/51 Datasheet

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1N5399-E3/51

Manufacturer Part Number
1N5399-E3/51
Description
Rectifier; 1.5 A (Max.) IFAV@Tcase; 50A Ifrm; 1000V VRSM; 1.5A IFRM
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of 1N5399-E3/51

Capacitance, Junction
15 pF
Current Squared Time Rating
3.7
Current, Forward
1.5 A
Current, Reverse
300 μA
Current, Surge
50 A
Package Type
DO-204AL (DO-41)
Primary Type
Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-50 to +150 °C
Time, Recovery
2 μs
Voltage, Forward
1.4 V
Voltage, Reverse
1000 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current 0.500" (12.7 mm)
lead length at T
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
Maximum full load reverse
current, full cycle average 0.375"
(9.5 mm) lead length at T
Operation junction and storage
temperature range
T
V
I
J
I
F(AV)
FSM
RRM
V
I
max.
R
F
L
= 70 °C
DO-204AL (DO-41)
L
= 70 °C
General Purpose Plastic Rectifier
A
SYMBOL 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNIT
T
= 25 °C unless otherwise noted)
J
V
V
I
I
I
V
R(AV)
, T
F(AV)
FSM
RRM
RMS
DC
STG
50 V to 1000 V
150 °C
5.0 μA
1.5 A
1.4 V
50 A
50
35
50
100
100
70
200
140
200
FEATURES
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters and freewheeling
diodes application.
(Note: These devices are not Q101 qualified.)
MECHANICAL DATA
Case: DO-204AL, molded epoxy body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes cathode end
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
300
210
300
- 50 to + 150
Vishay General Semiconductor
400
280
400
300
1.5
50
1N5391 thru 1N5399
500
350
500
600
420
600
800
560
800
1000
1000
700
µA
°C
V
V
V
A
A
1

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1N5399-E3/51 Summary of contents

Page 1

... FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) A PARAMETER SYMBOL 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNIT Maximum repetitive peak V RRM reverse voltage Maximum RMS voltage V RMS Maximum DC blocking voltage V DC Maximum average forward rectified current 0.500" (12.7 mm) ...

Page 2

... Figure 1. Forward Current Derating Curve °C unless otherwise noted) A SYMBOL 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNIT °C unless otherwise noted) A SYMBOL 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNIT R θJA R θJL PREFERRED PACKAGE CODE 150 175 Figure 2 ...

Page 3

... DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. 1N5391 thru 1N5399 Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance ...

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