W04G-E4/51 General Semiconductor / Vishay, W04G-E4/51 Datasheet

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W04G-E4/51

Manufacturer Part Number
W04G-E4/51
Description
Rectifier, Glass Passivated Single-Phase; Glass Passivated Single-Phase
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of W04G-E4/51

Capacitance, Junction
14 pF
Configuration
Single Phase
Current Squared Time Rating
10
Current, Forward
1.5 A
Current, Reverse
500 μA
Current, Surge
50 A
Package Type
WOG
Primary Type
Bridge Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Voltage, Forward
1 V
Voltage, Reverse
400 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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Manufacturer
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Price
Part Number:
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Company:
Part Number:
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Quantity:
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PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at
0.375" (9.5 mm) lead length at T
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
T
V
I
J
I
F(AV)
FSM
RRM
V
I
max.
R
F
Glass Passivated Single-Phase Bridge Rectifier
Case Style WOG
~
A
+
= 25 °C
A
~
= 25 °C unless otherwise noted)
50 V to 1000 V
+
~
150 °C
1.5 A
1.0 V
50 A
5 µA
SYMBOL W005G
T
J
V
V
I
I
V
F(AV)
, T
~
FSM
RRM
RMS
I
DC
2
t
STG
50
35
50
FEATURES
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, adapter, charger,
lighting ballaster on consumers and home appliances
applications.
MECHANICAL DATA
Case: WOG
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Typical I
• High case dielectric strength
• High surge current capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
W01G
100
100
70
and WEEE 2002/96/EC
W02G
200
140
200
Vishay General Semiconductor
R
less than 0.1 µA
- 55 to + 150
W04G
400
280
400
1.5
50
10
W005G thru W10G
W06G
600
420
600
W08G
800
560
800
W10G
1000
1000
700
UNIT
e4
A
°C
V
V
V
A
A
2
s
1

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W04G-E4/51 Summary of contents

Page 1

... V 50 100 RRM RMS V 50 100 DC I F(AV) I FSM STG W005G thru W10G Vishay General Semiconductor less than 0.1 µA R W04G W06G W08G W10G 200 400 600 800 1000 140 280 420 560 700 200 400 600 800 1000 1 150 e4 UNIT V V ...

Page 2

... Figure 2. Maximum Non-Repetitive Peak Forward Surge W02G W04G W06G W08G 1.0 5.0 500 14 W02G W04G W06G W08G 36 11 BASE QUANTITY DELIVERY MODE 100 Plastic bag °C A Single Sine-Wave 1.0 Cycle Number of Cycles Current Per Diode ...

Page 3

°C J Pulse Width = 300 µ Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) Figure 3. Typical Forward Characteristics Per Diode 100 100 ...

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