NTE2398 | |
|---|---|
| Manufacturer Part Number | NTE2398 |
| Description | MOSFET; N-Ch; VDSS 500V; RDS(ON) 1.5 Ohms; ID 4.5A; TO-220; PD 74W; VGS +/-20V; Qg 38nC |
| Manufacturer | NTE Electronics, Inc. |
| NTE2398 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of NTE2398 | |||
|---|---|---|---|
| Channel Type | N-Channel | Current, Drain | 4.5 A |
| Fall Time | 16 ns (Typ.) | Gate Charge, Total | 38 nC |
| Mounting And Package Type | M3 Screw Mounting | Operating And Storage Temperature | -55 to +150 °C |
| Package Type | TO-220 | Polarization | N-Channel |
| Power Dissipation | 74 W | Resistance, Drain To Source On | 1.5 Ohms |
| Resistance, Thermal, Junction To Case | 1.7 °C⁄W | Temperature, Operating, Maximum | +150 °C |
| Temperature, Operating, Minimum | -55 °C | Thermal Resistance, Junction To Ambient | 62 °C⁄W |
| Time, Rise | 16 ns (Typ.) | Time, Turn-off Delay | 42 ns |
| Time, Turn-on Delay | 8.2 ns | Transconductance, Forward | 2.5 Mhos |
| Voltage, Breakdown, Drain To Source | 500 V | Voltage, Forward, Diode | 1.6 V |
| Voltage, Gate To Source | ±20 V | ||
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Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
T
= +25 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
T
= +100 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Pulsed Drain Current (Note 1), I
Power Dissipation (T
= +25 C), P
C
Derate Linearly Above 25 C
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw)
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
= 50V, starting T
DD
Note 3. I
4.5A, di/dt
75A/ s, V
SD
NTE2398
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
= 10V), I
GS
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= +25 C, L = 24mH, R
J
G
V
, T
DD
(BR)DSS
J
–55 to +150 C
–55 to +150 C
. . . . . . . . . . . . . . . . .
L
10 lbfin (1.1Nm)
. . . . . . . . . . . .
thCS
= 25 , I
= 4.5A
AS
+150 C
4.5A
2.9A
18A
74W
0.59W/ C
20V
280mJ
4.5A
7.4mJ
3.5V/ns
+300 C
1.7 C/W
62 C/W
0.5 C/W
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|
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NTE2387 |
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|
|
NTE2377 |
MOSFET; N-Ch; VDSS 900V; RDS(ON) 1.2 Ohms; ID 8A; TO-3P; PD 150W; VGS +/-30V; gFS 5Mhos | NTE Electronics, Inc. |
|
|
NTE2308 |
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|
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NTE2319 |
Transistor, NPN; TO-3; NPN; 450 V; 6 V; 15 A; 175 W; -65 to 200 degC; 1 degC/W | NTE Electronics, Inc. |
|
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NTE2383 |
MOSFET, Power; P-Ch; VDSS 100V; RDS(ON) 0.3Ohm; ID 10.5A; TO-220; PD 75W; VGS +/-20V | NTE Electronics, Inc. |
|
|
NTE2385 |
MOSFET; N-Ch; VDSS 500V; RDS(ON) 0.85Ohm; ID 8A; TO-220; PD 125W; VGS +/-20V; gFS 4.9Mho | NTE Electronics, Inc. |
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NTE2398 Summary of contents |
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