IRFP450APBF Vishay PCS, IRFP450APBF Datasheet
IRFP450APBF
Manufacturer Part Number
IRFP450APBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.4Ohm; ID 14A; TO-247AC; PD 190W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRFP450APBF.pdf
(3 pages)
Specifications of IRFP450APBF
Current, Drain
14 A
Gate Charge, Total
64 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
190 W
Resistance, Drain To Source On
0.4 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
7.8 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.4 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP450APBF
Manufacturer:
IR
Quantity:
25
Part Number:
IRFP450APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
l
l
l
l
l
l
l
l
l
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
GS
STG
D
J
@ T
@ T
Drive Requirement
Avalanche Voltage and Current
dv/dt Ruggedness
@T
PFC Boost
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective Coss Specified ( See AN 1001)
Half Bridge, Full Bridge
Two Transistor Forward
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
HEXFET Power MOSFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-247AC
Max.
190
± 30
8.7
1.5
4.1
14
56
0.40Ω
G
D
S
Units
W/°C
V/ns
14A
°C
W
I
A
V
D
1
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IRFP450APBF Summary of contents
Page 1
Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free l Low Gate Charge Qg results in Simple l Drive Requirement Improved Gate, Avalanche and Dynamic l dv/dt Ruggedness Fully Characterized Capacitance ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
B - 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 3X 2.00 (.079) 2X 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: THIS IS AN IRFPE30 WIT H AS SEMBLY ...