1MBK50D-060S Fuji Semiconductor, 1MBK50D-060S Datasheet
1MBK50D-060S
Manufacturer Part Number
1MBK50D-060S
Description
IGBT; IGBT+FWD; Molded; TO-247 Case; 65A Collector; 200 W (Max.); 600V; +/-20V
Manufacturer
Fuji Semiconductor
Type
Moldedr
Datasheet
1.1MBK50D-060S.pdf
(2 pages)
Specifications of 1MBK50D-060S
Capacitance, Gate
2500 pF
Current, Collector
65 A
Package Type
TO-247
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.63 °C/W
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.4 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1MBK50D-060S
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
1MBK50D-060S
600V / 50A Molded Package
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
current
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Time
FWD forward on voltage
Reverse recovery time
*
Item
Thermal resistance
Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Electrical characteristics (at Tc=25°C unless otherwise specified)
Absolute maximum ratings (Tc=25°C)
Features
Applications
Maximum ratings and characteristics
DC
1ms
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Tc=25°C
Tc=25°C
Tc=100°C
Symbol
V
V
I
I
Icp
P
P
T
T
-
Symbol
Rth(j-c)
Rth(j-c)
C25
C100
Symbol
stg
C
C
j
I
I
V
V
C
C
C
t
t
t
t
t
t
t
t
t
t
V
t
GES
CES
CES
GES
on
r
rr2
off
f
on
r
rr2
off
f
rr
GE(th)
CE(sat)
ies
oes
res
*
*
F
*
*
Characteristics
Min.
Min.
Characteristics
-40 to +150
39.2 to 58.8
–
–
Rating
–
–
4.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
+150
600
±20
150
200
130
65
50
2500
Typ.
Typ.
240
130
–
–
–
–
5.0
2.4
0.15
0.09
0.03
0.50
0.10
0.15
0.09
0.03
0.50
0.10
2.0
0.06
Unit
V
V
A
A
A
W
W
°C
°C
N·m
Max.
Max.
10
1.0
6.0
2.9
–
–
–
–
–
–
0.62
0.17
–
–
–
0.62
0.17
2.5
0.10
0.63
0.96
V
V
V
V
V
V
f=1MHz
V
V
R
(Half Bridge)
Inductance Load
V
V
R
(Half Bridge)
Inductance Load
I
I
V
IGBT
FWD
Conditions
F
F
Conditions
GE
CE
CE
GE
GE
CC
GE
CC
GE
R
CE
G
G
=50A, V
=50A, V
=300V, di/dt=100A/µs
=33 ohm
=8 ohm
=0V, V
=20V, I
=15V, I
=0V, V
=0V
=25V
=300V, I
=±15V
=300V, I
=+15V
Equivalent Circuit Schematic
GE
GE
G:Gate
GE
CE
C
C
=-10V,
C
C
=50mA
=50A
=0V
=50A
=50A
C:Collector
=600V
=±20V
E:Emitter
IGBT + FWD
Molded IGBT
°C/W
°C/W
mA
µA
V
V
pF
µs
µs
V
µs
Unit
Unit
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1MBK50D-060S Summary of contents
Page 1
... Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · ...
Page 2
... Outline drawings, mm TO-247 Switching waveform (Inductance load) Mesurement circuit Gate Collector Emitter Molded IGBT ...