SI4559EY-T1-E3 Siliconix / Vishay, SI4559EY-T1-E3 Datasheet

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SI4559EY-T1-E3

Manufacturer Part Number
SI4559EY-T1-E3
Description
MOSFET, Dual, Complementary, 60V, 4.5/3.1A, SO-8
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI4559EY-T1-E3

Lead Free Status / Rohs Status
RoHS Compliant part

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI4559EY-T1-E3
Manufacturer:
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Quantity:
4 500
Part Number:
SI4559EY-T1-E3
Manufacturer:
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Quantity:
20 000
Notes
a.
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
N-Channel
N-Channel
P-Channel
P-Channel
Surface Mounted on FR4 Board, t
G
G
S
S
1
1
2
2
1
2
3
4
V
DS
–60
–60
60
60
Top View
SO-8
(V)
J
J
a
a
= 175 C)
= 175 C)
a
N-Channel 60-V (D-S), 175 C MOSFET
Parameter
Parameter
a
a
8
7
6
5
0.150 @ V
0.120 @ V
10 sec.
0.075 @ V
0.055 @ V
r
D
D
D
D
DS(on)
1
1
2
2
a
GS
GS
GS
GS
( )
= –4.5 V
= –10 V
= 4.5 V
= 10 V
N-Channel MOSFET
G
1
I
D
(A)
4.5
3.9
3.1
2.8
T
T
T
T
D
A
A
A
A
1
S
= 25 C
= 70 C
= 25 C
= 70 C
1
D
1
Symbol
Symbol
T
V
J
V
R
I
P
P
, T
DM
I
I
I
DS
GS
D
D
S
thJA
D
D
stg
P-Channel MOSFET
N-Channel
G
2
2.0
60
4.5
3.8
20
30
N- or P- Channel
www.vishay.com FaxBack 408-970-5600
D
–55 to 175
2
S
Vishay Siliconix
2
62.5
2.4
1.7
D
2
P-Channel
Si4559EY
–2.0
–60
3.1
2.6
20
30
Unit
Unit
C/W
W
W
V
V
A
A
A
C
2-1

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SI4559EY-T1-E3 Summary of contents

Page 1

... Document Number: 70167 S-57253—Rev. D, 24-Feb 4 – –4 N-Channel MOSFET Symbol stg Symbol R thJA Si4559EY Vishay Siliconix P-Channel MOSFET N-Channel P-Channel Unit 60 – 4.5 3.1 3.8 2 2.0 –2.0 2 1.7 –55 to 175 Channel Unit 62.5 C/W www.vishay.com FaxBack 408-970-5600 2-1 ...

Page 2

... Si4559EY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V GS(th) GS(th) Gate-Body Leakage Gate-Body Leakage I I GSS GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current DSS DSS b b On-State Drain Current On-State Drain Current ...

Page 3

... S-57253—Rev. D, 24-Feb- 1400 1200 1000 800 600 400 200 On-Resistance vs. Junction Temperature 2 1.9 1.6 1.3 1.0 0.7 0 –50 –25 Si4559EY Vishay Siliconix Transfer Characteristics T = – 150 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage ( 4 100 125 150 ...

Page 4

... Si4559EY Vishay Siliconix Source-Drain Diode Forward Voltage 175 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 –0 250 A D –0.2 –0.4 –0.6 –0.8 –1.0 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... S-57253—Rev. D, 24-Feb- 1400 1200 1000 800 600 400 200 C rss On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0 –50 –25 Si4559EY Vishay Siliconix Transfer Characteristics T = – 150 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss – Drain-to-Source Voltage ( 3 100 125 150 175 T – Junction Temperature ( C) J www ...

Page 6

... Si4559EY Vishay Siliconix Source-Drain Diode Forward Voltage 175 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.75 0. 250 A D 0.25 0.00 –0.25 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...

Page 7

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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