IRFPS40N50LPBF Vishay PCS, IRFPS40N50LPBF Datasheet
IRFPS40N50LPBF
Manufacturer Part Number
IRFPS40N50LPBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ohm; ID 46A; TO-274AA; PD 540W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRFPS40N50LPBF.pdf
(3 pages)
Specifications of IRFPS40N50LPBF
Current, Drain
46 A
Gate Charge, Total
380 nC
Package Type
TO-274AA
Polarization
N-Channel
Power Dissipation
540 W
Resistance, Drain To Source On
0.087 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
27 ns
Transconductance, Forward
21 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPS40N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Applications
•
•
•
•
•
Features and Benefits
•
•
•
•
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Diode Characteristics
I
I
V
t
Q
I
t
D
D
DM
S
SM
rr
RRM
on
J
STG
D
GS
SD
rr
@ T
@ T
@T
Symbol
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Parameter
Ã
Parameter
SMPS MOSFET
d
GS
GS
@ 10V
@ 10V
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
705
1.3
9.0
IRFPS40N50LPbF
300 (1.6mm from case )
1060
V
500V
180
250
330
–––
1.5
2.0
46
-55 to + 150
DSS
Max.
180
540
4.3
±30
nC T
46
29
34
ns T
A
V
A
HEXFET
R
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
DS(on)
J
J
J
J
J
J
0.087Ω
= 125°C, di/dt = 100A/µs
= 125°C, di/dt = 100A/µs
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C
Conditions
typ.
®
S
F
S
= 46A, V
= 46A
= 46A, V
Power MOSFET
Trr
170ns 46A
Super-247™
GS
GS
typ.
= 0V
= 0V
PD- 95141
f
f
Units
W/°C
V/ns
°C
W
A
V
f
f
I
D
1
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IRFPS40N50LPBF Summary of contents
Page 1
... I Pulsed Source Current SM Ã (Body Diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM t Forward Turn-On Time on IRFPS40N50LPbF SMPS MOSFET HEXFET V R DSS 500V Max. @ 10V 10V 29 GS 180 540 4.3 ± - 150 300 (1 ...
Page 2
... IRFPS40N50LPbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...
Page 3
... IRFPS40N50LPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" ...